| 纳米尺寸CdS半导体微晶的光致发光线宽宽化研究 |
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| 引用本文： | 吕少哲,向卫东.纳米尺寸CdS半导体微晶的光致发光线宽宽化研究[J].发光学报,1996,17(1):23-27. |
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| 作者姓名： | 吕少哲 向卫东 |
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| 作者单位： | 1. 中国科学院激发态物理开放实验室, 长春130021;2. 浙江大学材料科学工程系, 杭州310027 |
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| 基金项目： | 国家自然科学基金;中国科学院激发态物理开放实验室基金自主课题 |
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| 摘 要： | 测量了各种温度下玻璃中掺杂纳米尺寸CdS半导体微晶的光致发光光谱,研究了其光致发光带的峰值能量和线宽对温度的依赖关系.考虑CdS微晶的LO声子的相互作用,拟合了其带隙发光带的线宽随温度的变化曲线,获得样品的非均匀线宽.CdS微晶的非均匀线宽主要是由于微晶的尺寸分布引起的.
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| 关 键 词： | 光致发光 CdS半导体微晶 线宽 |
| 收稿时间： | 1995-03-15 |
INVESTIGATION OF THE PHOTOLUMINESCENCE LINE-WIDTH BROADENING IN NANOMETER-SIZE CdS SEMICONDUCTOR MICROCRYSTALLITES |
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| L&#,Shaozhe,Sun Lingdong,Zhao Jialong,Don Kai,Huang Shihua,Yu Jiaqi,Xiang Weidong,Ding Zishang.INVESTIGATION OF THE PHOTOLUMINESCENCE LINE-WIDTH BROADENING IN NANOMETER-SIZE CdS SEMICONDUCTOR MICROCRYSTALLITES[J].Chinese Journal of Luminescence,1996,17(1):23-27. |
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| Authors: | L&# Shaozhe Sun Lingdong Zhao Jialong Don Kai Huang Shihua Yu Jiaqi Xiang Weidong Ding Zishang |
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| Institution: | 1. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021;2. Dcpartmcnt of Materials Science and Engineering Zhejiang University, Hangzhou 310027 |
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| Abstract: | The photoluminescence spectra of nanometer-size CdS semiconductor microcrystallites doped in glass were measured at various temperatures. The temperature dependence of the peak energy and linewidth of the band-gap luminescence was investigated.Taking the LO phonon interaction into account, the linewidths of the luminescence as a function of temperature were fitted. The inhomogenous broadening constant was obtained and mainly associated with the size distribution of CdS microcrystallites. |
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| Keywords: | photoluminescence CdS semiconductor microcrystallites linewidth |
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