| 高频溅射生长ZnS:Tb,F薄膜的结构与发光 |
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| 引用本文： | 余庆选,班大雁.高频溅射生长ZnS:Tb,F薄膜的结构与发光[J].发光学报,1996,17(3):225-229. |
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| 作者姓名： | 余庆选 班大雁 |
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| 作者单位： | 1. 中国科学技术大学物理系, 合肥 230026;2. 中国科学技术大学结构分析中心, 合肥 230026 |
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| 摘 要： | 本文采用X射线衍射和阴极射线发光技术对溅射法生长的ZnS:Tb,F薄膜的发光光谱和薄膜的微观结构进行了研究,得出了激晶薄膜的晶粒尺寸与发光强度的关系.讨论了稀土离子的价态对掺杂稀土微晶薄膜的发光性质与晶粒尺寸的关系的影响.
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| 关 键 词： | ZnS:Tb F薄膜 微观结构 发光光谱 |
| 收稿时间： | 1995-09-22 |
MICROSTRUCTURE AND LUMINESCENT STUDIES OF EL THIN FILMS OF ZnS:Tb,F |
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| Yu Qingxuan,Ban Dayan,Zhang Jifa,Fang Rongchuan.MICROSTRUCTURE AND LUMINESCENT STUDIES OF EL THIN FILMS OF ZnS:Tb,F[J].Chinese Journal of Luminescence,1996,17(3):225-229. |
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| Authors: | Yu Qingxuan Ban Dayan Zhang Jifa Fang Rongchuan |
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| Institution: | 1. Department of Physics, Universily of Science and Technology of China, HeFei 230026;2. Structure Analysis Laboratory, University of Science and Technology of China, HeFei 230026 |
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| Abstract: | A systamatic study of the effect of the microstructure on the luminescence of ZnS:Tb, F thin film was carried out using X-ray diffraction and CL techniques.The Tb3+ emission intensity depends strongly on the substrate temperature and the annealing temperature, which also affects the crystallinity of the thin film.In addition, the effect of the gain size in the films and the type of valent charge states of rare earth ions on luminescence of polycrystalline thin film was also discussed. |
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| Keywords: | ZnS:Tb F thin film microstructure luminescence |
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