| 四元合金GaxIn1-xAs1-ySby的禁带宽度与组分关系的计 |
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| 引用本文： | 田园,张宝林.四元合金GaxIn1-xAs1-ySby的禁带宽度与组分关系的计[J].发光学报,1996,17(3):279-282. |
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| 作者姓名： | 田园 张宝林 |
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| 作者单位： | 中国科学院长春物理研究所, 长春 130021 |
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| 摘 要： | GalnAsSb是直接带隙、窄禁带的半导体材料,其波长范围为0. 87-12μm,粗盖了2-4 m, 3-5μm和8-12μm三个重要的红外应用波段,可制作室温下工作的红外光电器件,在光纤通信、环境监测、资源勘探、空间技术及军事等方面有广泛的应用前景.
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| 关 键 词： | 镓铟砷铅 半导体 禁带 |
| 收稿时间： | 1996-01-19 |
METHODS OF CALCULATION OF THE COMPOSITIONAL DEPENDENCE OF THE ENERGY BANDGAP FOR QUATERNARY ALLOYS GaxIn1-xAs1-ySby |
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| Tian Yuan,Zhang Baolin,Jin Yixin,Zhou Tianming,Li Shuwei,Ning Yongqian,Jiang Hong,Yuan Guang.METHODS OF CALCULATION OF THE COMPOSITIONAL DEPENDENCE OF THE ENERGY BANDGAP FOR QUATERNARY ALLOYS GaxIn1-xAs1-ySby[J].Chinese Journal of Luminescence,1996,17(3):279-282. |
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| Authors: | Tian Yuan Zhang Baolin Jin Yixin Zhou Tianming Li Shuwei Ning Yongqian Jiang Hong Yuan Guang |
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| Institution: | Changchun Institute of Physics, Chinest Academy of Science. Changchun 130021 |
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| Abstract: | The methods for calculating the compositional dependence of the energy bandgap for quaternary alloys GaxIn1-xAs1-ySby are discussed in this paper.The linear interpolation method by Moon et al.was applied to calculate the compositional dependence of the energy bandgap for Ⅲ-Ⅴ quaternary alloys.In addition, littejohn gave another method, which was partly different from that reported by Moon et al.According to the two method, we calculated the energy bandgap as a function of the compositions for quaternary alloys GaxIn1-xAs1-ySby.Comparing the calculated values with the experimental ones, we found that the linear interpolation method is better to calculate the energy bnadgap of GaxIn1-xAs1-ySby quaternary alloys. |
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