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条形叉指n阱和p衬底结的硅LED设计及分析
引用本文:杨广华,毛陆虹,黄春红,王伟,郭维廉.条形叉指n阱和p衬底结的硅LED设计及分析[J].发光学报,2010,31(3):369-372.
作者姓名:杨广华  毛陆虹  黄春红  王伟  郭维廉
作者单位:1. 天津大学 电子信息工程学院, 天津 300072;2. 天津工业大学 信息与通信工程学院, 天津 300161;3. 中国科学院 半导体所, 北京 100083
基金项目:国家自然科学基金,天津市基础研究重点项目 
摘    要:采用0.35μm双栅标准CMOS工艺最新设计和制备了叉指型SiLED发光器件。器件结构采用n阱和p衬底结,n阱为叉指结构,嵌入到p衬底中而结合成Sipn结LED。观察了SiLED发光显微图形及实际器件的版图,并在对器件进行了正、反向I-V特性测试、光功率及光谱特性的测量。SiLED的正向偏置时开启电压为0.9V,反向偏置时在15V左右可观察到发光。器件在室温下反向偏置时,10V,100mA电流下所得输出光功率为12.6nW,发光峰值在758nm处。

关 键 词:  发光器件  标准CMOS工艺
收稿时间:2009-06-25

Design and Analysis of a Forked n-Well and p-Sub Junction Si LED Based on Standard CMOS Technology
YANG Guang-hua,MAO Lu-hong,HUANG Chun-hong,WANG Wei,GUO Wei-lian.Design and Analysis of a Forked n-Well and p-Sub Junction Si LED Based on Standard CMOS Technology[J].Chinese Journal of Luminescence,2010,31(3):369-372.
Authors:YANG Guang-hua  MAO Lu-hong  HUANG Chun-hong  WANG Wei  GUO Wei-lian
Institution:1. Electronics and Information School, Tianjin University, Tianjin 300072, China;2. Information and Communication Institute, Tianjin Polytechnic University, Tianjin 300160, China;3. Institute of Semiconductors CAS, Beijing 100083, China
Abstract:As the surprising development of fiber telecommunication and microelectronics technology, opto-electronic integrated circuit (OEIC) has becomes the focus of advanced research in the world recently. At present, there have been many new technologies that are applied to silicon-based light emission, such as po-rous silicon, nano crystals, SiGe, and so on, because Si material is low cost and the manufacture technology is mature. However, these techniques realize optical interconnection difficultly, which can not be compatible with the mature very large scale integrated circuits (VLSI) technology. One of the key works is to realize a practical light source to satisfy the requirement of optical interconnection. To obtain a Si LED(light-emitting diode) which can transmit optical signal in a chip, it was considered to improve the light intense and decrease cost by using new manufacture technology. In this paper, a forked type of Si LED is designed and manufactured with Singapore Charters 0.35 μm double-grid standard CMOS technology. The device structure adopts n-well and p-sub junction, which n-well is a forked type and is embedded in p-sub. The idea of layout design is to achieve even light of Si LED, because the contact area of n-well and p-sub is large, and the electric field is symmetrical and uniform. At room temperature, the Si LED is reverse biased. The Si LEDs emitting micrographs and real layouts are captured by an Olympus IC microscope, and the I-V characteristics and emission spectra of Si LED are presented. With forward bias, the threshold voltage is 0.9 V. And the Si LED can emit an visible light when the reverse bias is 15 V. Its radiant intensity is 10 nW at 50 mA current and the emitting peak value is located at 758 nm. As it is known, Si is an indirect band gap material, the emission intense of Si LED would be low. But the emission of our Si LED can meet the detect requirement of Si detectors.
Keywords:silicon                  LED                  standard CMOS technology
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