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| n型硅微尖场发射电子能谱的模拟计算 | |
| 引用本文： | 元光,曹崇龙,宋翠华,宋航,屿拹秀隆,三村秀典.n型硅微尖场发射电子能谱的模拟计算[J].发光学报,2008,29(3). |
| 作者姓名： | 元光 曹崇龙 宋翠华 宋航 屿拹秀隆 三村秀典 |
| 作者单位： | 1. 中国海洋大学,物理系,山东,青岛,266100 2. 中国科学院,激发态物理重点实验室,吉林,长春,130033 3. 日本静冈大学,电子工学研究所,日本滨松 |
| 基金项目： | 国家重点基础研究发展计划(973计划) |
| 摘 要： | 结合金属的场发射电子能谱,模拟计算了场渗透对n型半导体硅微尖的场发射能谱的影响,并与n型硅微尖的场发射能谱实验结果进行了比较,讨论了模拟计算误差的来源。计算结果表明电场渗透现象导致硅的场发射能谱向低能方向偏移,表面电场越高,能谱的偏移量越大,其偏移程度可超过1eV。导致硅微尖的场发射能谱偏移的主要因素是半导体的场渗透现象。 |
| 关 键 词： | 场发射 电子能谱 硅微尖 电场渗透 |
Simulation of Electron Energy Distribution of n-type Si Emitter |
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| YUAN Guang,CAO Chong-long,SONG Cui-hua,SONG Hang,Shimawaki Hitetaka,Mimura Hitenori.Simulation of Electron Energy Distribution of n-type Si Emitter[J].Chinese Journal of Luminescence,2008,29(3). | |
| Authors: | YUAN Guang CAO Chong-long SONG Cui-hua SONG Hang Shimawaki Hitetaka Mimura Hitenori |
| Abstract: | The electron energy distribution of n-type silicon tips (EED/n-Si) is simulated as a function of gate bias and compared with experimental results. The simulation is based on the theory of electron energy distribution of metals (EED/M) taking account of the penetration of electric field into semiconductor. The calculated results showed the electron energy of EED/n-Si will shift to low energy with penetration of electric field, higher the gate bias or the electric field on surface and more shift of the electron energy of (EED/n-Si) to low energy. The shift could be over 1.5 eV according to gate bias. The penetration of electric field into the n-Si is predominant in the shift of electron energy of EED/n-Si. |
| Keywords: | field emission electron energy distribution silion tip penetration of electric field |
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