| GaAs0.6P0.4:Te深中心的电声耦合与晶格弛豫 |
| |
| 引用本文： | 林东海,周必忠.GaAs0.6P0.4:Te深中心的电声耦合与晶格弛豫[J].发光学报,1990,11(3):205-211. |
| |
| 作者姓名： | 林东海 周必忠 |
| |
| 作者单位： | 厦门大学物理系 |
| |
| 摘 要： | 用DLTS技术结合光电容定态谱、瞬态谱、OITS谱研究了GaAs0.6P0.4:Te深中心的光电性质和电声耦合作用,在GaAs0.6P0.4:Te中检测到两种深中心(A和B中心),表观热激活能分别为0.20和0.40eV,光离化阀值分别为0.60和1.31eV。详细研究了B中心的特性,测量了光离化截面谱的温度关系,发现有明显的声于展宽现象和晶格弛豫效应,并在低温(90K)观察到B中心的持续光电导效应。描绘出位形坐标图,说明了实验结果,较好地描述了B中心的特性,确认B中心属于DX中心。
|
| 关 键 词： | GaAs1－xPx Te 深中心 电声耦合 |
| 收稿时间： | 1989-12-01 |
ELECTRON-PHONON COUPLE AND LATTICE-RELAXATION EFFECT OF DEEP CENTERS IN GaAs0.6P0.4:Te |
| |
| Lin Donghai,Zhou Bizhong,Huang Jingzhao,Chen Shibo.ELECTRON-PHONON COUPLE AND LATTICE-RELAXATION EFFECT OF DEEP CENTERS IN GaAs0.6P0.4:Te[J].Chinese Journal of Luminescence,1990,11(3):205-211. |
| |
| Authors: | Lin Donghai Zhou Bizhong Huang Jingzhao Chen Shibo |
| |
| Institution: | Department of Physics, Xiamen University, 361005 |
| |
| Abstract: | GaAs0.6P0.4:Te is an important photo-electronic material. Recently increasing altension has been paid to the deep centeis in it. But the studies on the complex properties and microscopic structures of these deep centers are not efficient. In this paper we report the results of deep centers in GaAs0.6P0.4:Te studied by DLTS, steady and transient photo-capacitance, OITS and initial slope method. The photo-electronic properties and eleclron-phonon couple effects of the deep centers have been analyzed. |
| |
| Keywords: | |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《发光学报》浏览原始摘要信息 |
| 点击此处可从《发光学报》下载免费的PDF全文 |
|
