| CdS半导体纳米晶体高强度激发下光谱特性研究 |
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| 引用本文： | 窦恺,赵家龙.CdS半导体纳米晶体高强度激发下光谱特性研究[J].发光学报,1995,16(3):278-280. |
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| 作者姓名： | 窦恺 赵家龙 |
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| 作者单位： | 1. 中国科学院长春物理研究所激发态物理开放实验室, 长春 130021;2. 浙江大学材料科学工程系, 杭州 310027 |
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| 摘 要： | CdS半导体微晶作为代表性介观材料(mesoscopic material)其光学吸收和发光与量子尺寸效应的关系已经得到广泛研究1-4],发现随着CdS微晶尺寸减小,CdS本征吸收和发射带呈现显著蓝移.Rossetti等人3]和Y.Wang等人4]分别通过对溶胶、沸石、聚合物和玻璃中CdS纳米晶体的光致发光测量研究了发光来源以及发光与尺寸的关系,确定了两个宽带发光分别属于带隙发光(350-500nm)和表面态或缺陷发光(500-700nm).本文首次报道了利用溶胶凝胶方法制备的钠硼硅中纳米尺寸CdS晶体高激发功率条件下的发光光谱测量结果,观察到随激发功率增加发光光谱兰移和线宽明显宽化,讨论了其物理机制.
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| 关 键 词： | 硫化镉 半导体 光谱特性 纳米晶体 |
| 收稿时间： | 1995-06-29 |
HIGH EXCITATION PHOTOLUMINESCENCE OF CdS NANOCRYSTALS DOPED SODIUM BOROSILICATEGLASS |
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| Don Kai,Zhao Jialong,Jin Chunming,Sun Lingdong,Huang Shihua,Yu Jiaqi.HIGH EXCITATION PHOTOLUMINESCENCE OF CdS NANOCRYSTALS DOPED SODIUM BOROSILICATEGLASS[J].Chinese Journal of Luminescence,1995,16(3):278-280. |
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| Authors: | Don Kai Zhao Jialong Jin Chunming Sun Lingdong Huang Shihua Yu Jiaqi |
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| Institution: | 1. Laboratory of Excited State Processes, Changchun Institute of Physics, Chinese Academy of Scieaces, Changchun 130021;2. Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027 |
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| Abstract: | Abstract High excitation photoluminescence of CdS nanosize microcrystals doped sodium borosillcate galssat 30Kwas investigated.The dependence of luminescence peak shift and spectral broadeningon the excitation power was experimentally measured.The pos-sible mechanism of the spectral broadeningwlth increasing the excitation power was proposed and discussed |
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