| 46.2W连续输出808nm高功率无铝半导体激光线阵模块 |
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| 引用本文： | 曲宙,刘云,王祥鹏,苏华,套格套,王超,单肖楠,姚迪,王立军.46.2W连续输出808nm高功率无铝半导体激光线阵模块[J].发光学报,2006,27(5):801-804. |
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| 作者姓名： | 曲宙 刘云 王祥鹏 苏华 套格套 王超 单肖楠 姚迪 王立军 |
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| 作者单位： | 1. 中国科学院激发态物理重点实验室, 吉林长春, 130033;2. 中国人民解放军信息工程大学理学院, 河南郑州, 450052;3. 吉林大学物理学院, 吉林长春, 130022 |
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| 摘 要： | 利用InGaAs/InGaAsP应变量子阱外延材料制作出高功率半导体激光器线阵模块,前腔面镀制了单层Al2O3,后腔面镀制了Al2O3/5(HfO2/SiO2)/HfO2,采用无氧铜热沉和高效率的液体冷却器散热。在室温下,驱动电流50A时输出功率高达46.2W,最高电光转换效率41.3%,斜率效率1.15W/A。器件中心激射波长810nm,波长温度系数为0.28nm/℃,光谱半峰全宽(FWHM)3nm,寿命突破11732h。
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| 关 键 词： | 高功率半导体激光阵列 量子阱 高反膜 增透膜 线阵模块 |
| 文章编号： | 1000-7032（2006）05-0801-04 |
| 收稿时间： | 2006-04-09 |
| 修稿时间： | 2006-04-092006-06-12 |
808 nm Wavelength High Power Free-Al Diode Array Module |
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| QU Zhou,LIU Yun,WANG Xiang-peng,SU Hua,TAO Ge-tao,WANG Chao,SHAN Xiao-nan,YAO Di,WANG Li-jun.808 nm Wavelength High Power Free-Al Diode Array Module[J].Chinese Journal of Luminescence,2006,27(5):801-804. |
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| Authors: | QU Zhou LIU Yun WANG Xiang-peng SU Hua TAO Ge-tao WANG Chao SHAN Xiao-nan YAO Di WANG Li-jun |
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| Institution: | 1. Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130033, China;2. The Science Insititute of P.L.A. Information Engineering University, Zhengzhou 450052, China;3. Department of Physics, Jilin University, Changchun 130022, China |
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| Abstract: | High power diode lasers have been used in printing, defense, medical, and materials processing because of their compact size, low cost per Watt, and high electricity-optics converting efficiency. InGaAs/InGaAs Pstrained-compensated single-quantum well structure with an emission-wavelength of 808 nm was grown.The back HRcoating was Al2O3/5 (HfO2/SiO2)/HfO2 and the front AR coating was Al2O3. Anovel water-cooler and heat-sink with new structure developed by ourselves performed efficiently. Driving by the SM-15 continuous laser power produced by δ Company of German, the CW module performed excellently and their lifetimes are up to 11732 hours under the room temperature. As a result, this reached the leading level domestically. The highest electricity-optics converting efficiency is up to 41.3%.The CW output power of the module reached to 46.2 Wat a current of 50 A.The slope efficiency is 1.15 W/Aand the central emission wavelength is 810 nm with a FWHM of 3 nm.808 nm high power semiconductor lasers are ideal light pump source for Nd:YAGlaser. Development of high-power semiconductor laser arrays will broaden the application of the semiconductor lasers in industry, medical treatment and display. |
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| Keywords: | high power semiconductor laser array quantum well HR coating AR coating array module |
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