基于外腔反馈二极管线阵列的smile效应测量方法

采用外建激光谐振腔,在低于原芯片阈值的电流激励下对LDA的每个发光点进行单独测量,从而分析整个半导体激光阵列(LDA)的smile效应。实验中利用镀膜反射率大于半导体前腔面的外腔镜形成外腔半导体激光器。在外腔中插入曲面平行于p-n结的柱面镜,使只在光轴上的发光点与外腔镜形成外腔激光器,降低该发光点的激光阈值,从而使其在正常的阈值以下的电流激励下输出激光,在平行于p-n结的方向移动柱面镜,可以逐个对半导体激光器中的发光点进行选择测量,从而获得LDA smile效应的测量值。测量中的低电流激励产生的热量对芯片寿命没有影响,对LDA的发光点的单个测量也避免了其他发光点对CCD的影响。

Smile Effect Measurement of Laser Diode Line Arrays Based on External Cavity

The smile effect was measured in the process of semiconductor laser packaging using the external cavity mirror of which the reflectance was greater than the front cavity surface of the semi-conductor to form external cavity semiconductor laser. In measurement, the cylindrical lens was in-serted in the external cavity. The external laser cavity was only formed between the outer mirror and the single light emitting point in the cylindrical lens light axis. The laser threshold of the light emit-ting point was reduced to output laser under the excitation current less than the normal threshold val-ue. The light emitting point of the diode laser was selected one by one by moving the cylinder lens, so the smile effect was measured by summarizing all beam position. The low current is no harmful effects on the diode laser bar, and the influence of the other emitters on CCD is avoided by measur-ing single emitter.