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化学气相沉积法制备β-Ga_2O_3纳米结构及其缺陷发光性质研究
引用本文:薛金玲,马剑钢.化学气相沉积法制备β-Ga_2O_3纳米结构及其缺陷发光性质研究[J].发光学报,2017,38(10):1273-1279.
作者姓名:薛金玲  马剑钢
作者单位:东北师范大学 紫外光发射材料与技术教育部重点实验室, 吉林 长春 130000
基金项目:国家自然科学基金,吉林省科技发展计划,教育部高等学校博士学科点基金(20110043120004;20130043110004)资助项目Supported by National Natural Science Foundation of China,Science and Technology Development Plan of Jilin Province,Doctoral Program of Higher Education Institution of The Ministry of Education
摘    要:利用化学气相沉积法(CVD),在不同压强下分别得到β-Ga2O3纳米线(NWs)和纳米带(NBs)。研究结果表明,获得的NWs与NBs均为单斜结构的β-Ga2O3,且NWs结晶质量优于NBs。在阴极射线发光(CL)光谱中,发现NWs与NBs在近紫外和蓝光波段有较强的发光。对比NWs与NBs的CL光谱,推断β-Ga2O3在374 nm和459 nm的近紫外和蓝色发光峰分别来自于Ⅰ型和Ⅱ型氧空位(VO(I)和VO(Ⅱ))的缺陷复合。

关 键 词:化学气相沉积  β-Ga2O3  阴极射线发光  氧空位
收稿时间:2017-03-20

Defects Luminescence Behavior of β-Ga2 O3Nanostructures Synthesized by Chemical Vapor Deposition
XUE Jin-ling,MA Jian-gang.Defects Luminescence Behavior of β-Ga2 O3Nanostructures Synthesized by Chemical Vapor Deposition[J].Chinese Journal of Luminescence,2017,38(10):1273-1279.
Authors:XUE Jin-ling  MA Jian-gang
Institution:Key Laboratory of UV Light Emitting Materials and Devices of Ministry of Education, Northeast Normal University, Changchun 130000, China
Abstract:β-Ga2 O3 nanowires ( NWs) and nanoribbons ( NBs) were synthesized under different gas flow rates via chemical vapor deposition ( CVD) method. The results show that the NWs and NBs are monoclinic structure. NWs has higher crystal quality than NBs. The cathode luminescence ( CL) spectra show that the NWs and NBs have strong UV-blue emission band. By comparing the CL spec-tra of the NWs and NBs, it is found that the UV and blue luminescence of β-Ga2 O3 NWs and NBs located at 374 and 459 nm, mainly due to radiative recombination emission of oxygen vacancies ( VO(Ⅰ) and VO(Ⅱ) ) .
Keywords:chemical vapor deposition method  β-Ga2 O3  cathode luminescence( CL)  oxygen vacancies
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