| 柔性低温多晶硅薄膜晶体管的弯曲稳定性 |
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| 引用本文： | 岳致富,吴勇,李喜峰,杨祥,姜姝,许云龙.柔性低温多晶硅薄膜晶体管的弯曲稳定性[J].发光学报,2017,38(9). |
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| 作者姓名： | 岳致富 吴勇 李喜峰 杨祥 姜姝 许云龙 |
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| 作者单位： | 1. 上海大学 材料科学与工程学院, 上海 200072;上海大学 新型显示技术及应用集成教育部重点实验室, 上海 200072;2. 上海天马微电子有限公司,上海,201201;3. 上海大学 新型显示技术及应用集成教育部重点实验室,上海,200072 |
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| 基金项目： | 国家高技术研究发展计划(863)，上海科学技术委员会项目(16JC1400602)资助Supported by National High Technology Research and Development Program(863)，Shanghai Science and Technology Commission Program |
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| 摘 要： | 研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时,在拉伸弯曲状态下,阈值电压和平坦时保持一致(Vth=-1.34 V),迁移率μsat从45.65 cm~2/(V·s)降到45.17 cm~2/(V·s),开关比增大;在压缩弯曲状态下,转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时,进行了正负偏压稳定性测试,结果表明,器件依然具有很好的稳定性。
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| 关 键 词： | 柔性 低温多晶硅薄膜晶体管 低温多晶硅 弯曲 稳定性 |
Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors |
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| YUE Zhi-fu,WU Yong,LI Xi-feng,YANG Xiang,JIANG Shu,XU Yun-long.Bending Stability of Flexible Low Temperature Poly-silicon Thin-film Transistors[J].Chinese Journal of Luminescence,2017,38(9). |
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| Authors: | YUE Zhi-fu WU Yong LI Xi-feng YANG Xiang JIANG Shu XU Yun-long |
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| Abstract: | The bias stability of the flexible thin-film transistors under various bending radii was investigated.The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate.The changing region of the bending radius was from 15 mm to 3 mm.For the stretch bending, the threshold voltage kept the same with the flat(Vth=-1.34 V), the mobility reduced from 45.65 cm2/(V·s) to 45.17 cm2/(V·s), and Ion/Ioff increased.For the compress bending, the transfer curve well kept the same with the flat.When the minimum bending radius was 3 mm, the device was tested under the positive and negative bias stress, and showed good stability.The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability. |
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| Keywords: | flexible thin-film transistors LTPS-TFT bending stability |
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