基于X射线的晶圆级器件辐照与辐射效应参数提取设备的设计与实现

基于标准工艺线的设计加固是大规模集成电路抗辐射加固的发展趋势,对微纳米单元器件进行辐射效应参数提取是实现设计加固的前提。为了摒除参数提取过程中封装引入的影响,实现在线参数测试,本文设计了一套晶圆级器件辐照与辐射效应参数提取试验装置,兼备晶圆级器件电离总剂量辐照、器件参数在线测试分析功能,并且具有通用性强、测量范围宽、结构一体化、操作自动化等特点。对设备在50 kV管压下产生的X射线能谱、剂量率、束斑的测量以及对晶圆级MOS器件进行I-V、C-V、低频噪声特性的测试分析结果表明,该设备符合ASTM F1467测试标准,且能满足晶圆级器件辐射效应参数提取要求,可为大规模集成电路抗辐射设计加固提供良好的试验条件。

Design of Wafer Level Device Irradiation and The Parameters Extraction Equipment Based on X-ray Irradiation

The design of radiation hardening large scale integrated circuit based on the standard process is the development tendency in the future.Extracting the radiation effect parameters of the nano device is the foundation of improvement of the radiation hardening.In order to eliminate the influence introduced by encapsulation in the parameter extraction process, a set of equipment for irradiation parameters extraction of wafer level device was designed, which could realize the function of online X-ray irradiation and online parameter test and analysis with the advantage of strong commonality, wide measuring range.The X-ray energy spectra, dose rate, beam uniformity were measured with the tube voltage of 50 kV, as well as I-V, C-V and low frequency noise characteristics of the wafer level MOS device were test and analysis.The experiment results show that the equipment can satisfy the standard of ASTM F1467 test, and meet the requirements of the radiation effect parameters extraction of the wafer level device.The equipment can provide a good test condition for the design of radiation hardening large scale integrated circuit.