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6H-SiC衬底上AlGaN基垂直结构紫外LED的制备
引用本文:刘明哲,李鹏翀,邓高强,张源涛,张宝林.6H-SiC衬底上AlGaN基垂直结构紫外LED的制备[J].发光学报,2017,38(6):753-759.
作者姓名:刘明哲  李鹏翀  邓高强  张源涛  张宝林
作者单位:吉林大学电子科学与工程学院 集成光电子学国家重点联合实验室, 吉林 长春 130012
基金项目:国家重点研发计划,吉林省科技发展计划,教育部新世纪人才计划(NCET13-0254)资助项目 Supported by National Key R&D Projects,Science and Technology Development Plan of Jilin Province,New Century Talent Program of Education Ministry
摘    要:利用金属有机物化学气相沉积方法,在n型6H-SiC衬底上制备了15对Si掺杂Al_(0.19)Ga_(0.81)N/Al_(0.37)Ga_(0.63)N DBR,并采用低温AlN缓冲层有效抑制了DBR结构中裂纹的产生,得到了表面均方根粗糙度仅为0.4 nm且导电性能良好的n型DBR,其在369 nm处峰值反射率为68%,阻带宽度为10 nm。在获得导电DBR的基础上,进一步在n型6H-SiC衬底上构建了有、无DBR的垂直结构紫外LED。对比两者电致发光光谱,发现DBR结构的引入有效增强了LED紫外发光强度。

关 键 词:AlGaN  紫外发光二极管  分布式布拉格反射镜  金属有机物化学气相沉积  垂直结构
收稿时间:2017-01-03

Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate
LIU Ming-zhe,LI Peng-chong,DENG Gao-qiang,ZHANG Yuan-tao,ZHANG Bao-lin.Fabrication of Vertical Structure Ultraviolet LED on 6H-SiC Substrate[J].Chinese Journal of Luminescence,2017,38(6):753-759.
Authors:LIU Ming-zhe  LI Peng-chong  DENG Gao-qiang  ZHANG Yuan-tao  ZHANG Bao-lin
Institution:State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Abstract:Silicon-doped Al0.19Ga0.81N/Al0.37Ga0.63N DBRs were grown on n-type 6H-SiC substrates by metal organic chemical vapor deposition(MOCVD).To suppress the generation of cracks, a low-temperature AlN pre-deposition layer on 6H-SiC(0001) substrate was used as buffer.A smooth-surface 15-pair electrically conducting DBR with a reflectance of 68% at 369 nm was obtained.The stop-band bandwidth and RMS value of DBR are 10 nm and 0.4 nm, respectively.Furthermore, the vertical structure UV LEDs with and without n-DBR on 6H-SiC substrate were fabricated.By comparing EL spectra, it is shown that the introduction of DBR structure can effectively improve the UV emission.
Keywords:AlGaN  ultraviolet LED  distributed Bragg reflectors  metal organic chemical vapor deposition  vertical structure
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