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| 用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性(英文) | |
| 引用本文： | 李俊,周帆,张建华,蒋雪茵,张志林.用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性(英文)[J].发光学报,2012,33(11):1258-1263. |
| 作者姓名： | 李俊 周帆 张建华 蒋雪茵 张志林 |
| 作者单位： | 李俊:上海大学 材料科学与工程学院, 上海 200072上海大学 新型显示技术与应用集成教育部重点实验室, 上海 200072 周帆:上海大学 材料科学与工程学院, 上海 200072 张建华:上海大学 新型显示技术与应用集成教育部重点实验室, 上海 200072 蒋雪茵:上海大学 材料科学与工程学院, 上海 200072 张志林:上海大学 材料科学与工程学院, 上海 200072上海大学 新型显示技术与应用集成教育部重点实验室, 上海 200072 |
| 基金项目： | 国家自然科学基金(61274082,61077013,60777018,60776040); 国家“863”计划 (2010AA3A337, 2008AA03A336); 中国博士后基金(2012T50387,2011M500569)资助项目 |
| 摘 要： | 制备了基于反应溅射SiOx绝缘层的InGaZnO-TFT,并系统地研究了InGaZnO-TFT在白光照射下的稳定性,主要涉及到光照、负偏压、正偏压、光照负偏压和光照正偏压5种情况。结果表明,器件在光照和负偏压光照下的阈值偏移较大,而在正偏压光照情况下的阈值偏移几乎可以忽略。采用C-V方法证明阈值电压漂移是源于绝缘层/有源层附近及界面处的缺陷。另外,采用指数模式计算了缺陷态的弛豫时间。本研究的目的就是揭示InGaZnO-TFT在白光照射和偏压下的不稳定的原因。 |
| 关 键 词： | 薄膜晶体管 稳定性 反应溅射SiOx |
| 收稿时间： | 2012/7/1 |
The Stability of IGZO-TFT with Reactive Sputtered SiOx Insulator under White Light Illumination |
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| LI Jun,ZHOU Fan,ZHANG Jian-hua,JIANG Xue-yin,ZHANG Zhi-lin.The Stability of IGZO-TFT with Reactive Sputtered SiOx Insulator under White Light Illumination[J].Chinese Journal of Luminescence,2012,33(11):1258-1263. | |
| Authors: | LI Jun ZHOU Fan ZHANG Jian-hua JIANG Xue-yin ZHANG Zhi-lin |
| Institution: | 1,2 (1.Department of Materials Science,Shanghai University,Shanghai 201800,China;2.Key Laboratory of Advanced Display and System Applications,Ministry of Education,Shanghai University,Shanghai 200072,China) |
| Abstract: | We systematically investigated the stability of gallium indium zinc oxide (IGZO) thin film transistor (TFT) with reactive sputtered SiOx insulator under white light illuminaion. The research involved an overall stress conditions that included light stress (LS), negative voltage stress (NBS), positive voltage stress (PBS), negative bias-light stress (NBLS), and positive bias-light stress (PBLS). The results demonstrate a large threshold voltage shift under LS and NBLS conditions, and a negligible threshold voltage shift under PBLS condition. The C-V characteristics indicated that the shift of threshold voltage came from traps generated at or near the dielectric/semiconductor interface. Additionally, the stretched exponential model was used to obtain the relaxation time. This work aimed to provide an instability origin of IGZO-TFT under white light illumination and gate voltage bias. |
| Keywords: | thin film transistor stability reactive sputtered SiOx |
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