电沉积法制备ZnO纳米柱及其机制研究

采用阴极还原方法,以Zn(NO₃)₂水溶液为电解液制备ZnO纳米柱。分析了不同沉积电位和不同沉积时间的缓冲层对ZnO纳米柱的密度、形貌及取向的影响。通过分析缓冲层在不同沉积时间下的电流密度变化,研究了缓冲层对ZnO纳米柱密度影响的机理。利用扫描电子显微镜(SEM)和X射线衍射(XRD)分析了样品的表面形貌及结构。研究结果表明,缓冲层能够增加ZnO纳米柱的密度及c轴的取向性,当缓冲层的沉积时间为60 s时,可以得到密度最大、取向最好的ZnO纳米柱。

Fabrication and Growth Mechanism of ZnO Nanorods by Electrochemical Method

ZnO nanorods arrays were prepared by cathodic electrochemical deposition method,in which ITO-coated glass substrate were used as a cathode.The electrolyte consisted of an aqueous solution of Zn(NO3)2·6H2O with the concentration of 0.01 mol·L-1 and KCl supporting electrolyte with the concentration of 0.1 mol·L-1 were used for the depositing.The influences of depostion potential and buffer layer on the preferred orientation and density of the ZnO nanorods were investigated by scanning electron microscope(SEM) and X-ray diffraction(XRD).A significant variation of density and orientation of ZnO nanorod arrays were obtained by changing the deposition time of buffer layer.Pre-deposition ZnO buffer layer relieved the lattice mismatch between ZnO and ITO substrate,and also provided the nuclei centers for the ZnO nanorods.SEM and XRD data showed that ZnO nanorods with the highest density and best c-axis orientation can be achieved by pre-depositing a buffer layer at applied potential of-1.10 V and last for 60 s.