稀土离子掺杂Ⅲ-Ⅴ族半导体的发光

稀土离子掺杂Ⅲ-Ⅴ族半导体的发光是近年来开展起来的新的研究领域.在GaAs,InP和GaP等材料中,用离子注入、LPE、MBE、MOCVD以及单晶生长等方法掺杂Er、Yb和Nd等稀土离子,得到了尖锐稀土离子的特征发光.这些发光来自占据正常立方格点和非立方格点的稀土离子的内部4f能级跃迁,其发光行为与掺杂条件关系很大.这种稀土一半导体材料已开始用来制备具有稳定发射波长的发光和激光器件.

LUMINESCENCE OF RARE EARTH DOPED Ⅲ-Ⅴ COMPOUND SEMICONDUCTORS

Characteristic luminescence of rare earth(RE)ions have been demonstrated from RE doped Ⅲ-Ⅴ compound semiconductors,such as Yb,Er and Nd doped GaAs,InP and GaP.Because of the effective screen of suriounded 5S2 and 5P6 shells,the spectra of RE ions in Ⅲ-Ⅴ compound semiconductors exhibit narrow lines arising from intra 4f-shell spin-orbit levels transitions as in other solid state materials.Usually,the RE ion occupied cation sites of Ⅲ-Ⅴ semiconductors in different doping technologies.These RE-doped Ⅲ-Ⅴ semiconductors have exhibited promising applications for d-c pumped optoelectronic devices.This paper reviews recent research work on photoluminescence(PL)and electroluminescence(EL)chaiacteristics of rare earth doped Ⅲ-Ⅴcompound semiconductors.