多孔硅的表面碳膜钝化

报道对多孔硅（ＰＳ）进行碳膜（ＣＦ）钝化处理的结果。红外吸收光谱表明，经钝化处理样品的表面由Ｓｉ－Ｃ、Ｓｉ－Ｎ和Ｓｉ－Ｏ键所覆盖；荧光我谱表明，经钝化处理的样品较未处理的样品发光强度提高４￣４．５倍，且发光峰位明显蓝移；存放实验显示，经钝化处理的样品发光强度稳定、发光峰位不变。这些结果表明正丁胺可以在多孔硅表面形成优良的钝化碳膜，是一种十分有效的多孔硅后处理途径。

Surface Passivation of Porous Silicon by Carbon Film

By using n-butylamine as carbon resource, a layer of carbon film is covered on the porous silicon(PS) surface by means of radio frequency glow discharge. Raman spectra and IR spectra of the carbon film indicate that there are amino-groups and hydrogen atoms in the carbon film. IR spectra exhibit that the surface of the treated sample is mainly covered with Si-C Si-N and Si-O. Compared with the sample without the treatment, the photoluminescence (PL) intensity of the treated sampie is 4 - 4. 5 times stronger, and the 30um blueshift of the PL peak was observed experimentally; furthermore, the intensity decay and the blueshift of the PL peak has not been observed after storing for 60 days in the atmosphere. It is presented that the enhancement of the PL intensity and stability of the treated sample is due to the existence of Si-C, Si-N and Si-O on the PS surface simultaneously, and blueshift of the PL peak is attributed to aminogroups and hydrogen atmos in the carbon film. The results show that carbon films can be an excellent passivation films on porous silicon and may be good to the practical application.