首页 | 本学科首页   官方微博 | 高级检索  
     检索      

多孔硅光致发光峰半峰全宽的压缩
引用本文:廖家欣,任鹏,史向华,刘小兵.多孔硅光致发光峰半峰全宽的压缩[J].发光学报,2006,27(3):402-406.
作者姓名:廖家欣  任鹏  史向华  刘小兵
作者单位:1. 长沙理工大学, 物理与电子科学系, 湖南, 长沙, 410077;2. 长沙理工大学, 期刊中心, 湖南, 长沙, 410076
基金项目:湖南省自然科学基金(04JJ3030),湖南省教育厅青年科学基金(03B006)资助项目
摘    要:硅发光对于在单一硅片上实现光电集成是至关重要的.目前已有的使硅产生发光的方法有:掺杂深能级杂质、掺稀土离子、多孔硅、纳米硅以及Si/SiO2超晶格.声空化所引发的特殊的物理、化学环境为制备光致发光多孔硅薄膜提供了一条重要的途径.实验表明,声化学处理对于改善多孔硅的微结构,提高发光效率和发光稳定性都是一项非常有效的技术.超声波加强阳极电化学腐蚀制备发光多孔硅薄膜,比目前通用的常规方法制备的样品显示出更优良的性质.这种超声波的化学效应源于声空化,即腐蚀液中气泡的形成、生长和急剧崩溃.在多孔硅的腐蚀过程中,由于超声波的作用增加了孔中氢气泡的逸出比率和塌缩,有利于孔沿垂直方向的腐蚀,使多孔硅光致发光峰的半峰全宽压缩到了3.8nm.

关 键 词:多孔硅  光致发光  超声声空化
文章编号:1000-7032(2006)03-0402-05
收稿时间:2005-05-20
修稿时间:2005-07-08

Compress Full Width at Half Maximum of Porous Silicon Photoluminescence Spectrum
LIAO Jia-xin,REN Peng,SHI Xiang-hua,LIU Xiao-bing.Compress Full Width at Half Maximum of Porous Silicon Photoluminescence Spectrum[J].Chinese Journal of Luminescence,2006,27(3):402-406.
Authors:LIAO Jia-xin  REN Peng  SHI Xiang-hua  LIU Xiao-bing
Institution:1. Department of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410077, China;2. Center of Journal, Changsha University of Science & Technology, Changsha 410076, China
Abstract:The special physicochemical environment caused by sonic-vacating provides an important outlet for the preparation of highly efficient luminescent porous silicon(PS) films.Experiment results show that sonic-chemical treatment is an effective technology for the improvement of the microstructure of porous silicon,the luminescent efficiency and stability thereof.Luminescent porous silicon films,prepared by ultrasonic-(enhanced)(anode) electrochemical etching,display better qualities than the samples prepared by conventional methods widely used at present.This ultrasonic-chemical effect roots in sonic-vacating,i.e.the generation,formation and rapid collapse of bubbles in the etching solution.In the process of the PS being etched,the(escape) rate and caving-in of hydrogen bubbles in the pores is increased as a result of the work of the ultrasonic wave which is helpful to the vertical etching of the pores.It made full width at half maximum of porous silicon(photoluminescence) peak compress to 3.8 nm.In summary,we have presented an ultrasonic anodic etching method for fabricating light-emitting porous silicon material.Surface and cross-sectional SEM investigations(reveal) that when other etch parameters are constant,the ultrasonic etching creates a thicker and more uniform porous silicon layer,with smaller silicon pores than that of PS prepared by DC etching or pulsed etching.AFM observations further confirm the improved structural properties,which can be explained by the porous silicon formation mechanics especially by ultrasonic cavitation.The studies of both porous silicon single layer and(porous) silicon microcavity(PSM) show that ultrasonic etching optimizes the sample's optical characteristics.The best quality sample has been acquired by combining the ultrasonic etching with pulsed etching.This new etching method is an efficient technique to fabricate porous silicon materials,especially PSM,and opens a(feasible) way to realizing the(application) of porous silicon materials.
Keywords:porous silicon  photoluminescence  ultrasonic sonic-vacating
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《发光学报》浏览原始摘要信息
点击此处可从《发光学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号