| 1.3μm InGaAsP/InP双异质结发光管的特性研究 |
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| 引用本文： | 水海龙,张桂成,邬祥生,陈启玙,徐少华,杨易,陈瑞璋,胡道珊.1.3μm InGaAsP/InP双异质结发光管的特性研究[J].发光学报,1982,3(3):72-77. |
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| 作者姓名： | 水海龙 张桂成 邬祥生 陈启玙 徐少华 杨易 陈瑞璋 胡道珊 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 用液相外延技术生长的三层和四层InGaAsP/InP双异质结材料,制成了1.3μm InGaAsP/InP双异质结发光管。光功率输出(100mA)>1.0mW,最高2mW,尾纤输出功率(N.A.0.23,芯径60μ)>50μW。文中描述了器件的特性参数,还讨论了光功率的饱和特性和退化特性。
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| 收稿时间： | 1982-05-28 |
STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S |
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| Shui Hai-long,Zhang Gui-cheng,Wu Xiang-sheng,Chen Qi-yu,Xu Shao-hua,Yang Yi,Chen Rui-zhang,Hu Dao-shan.STUDY OF THE CHARACTERISTICS FOR 1.3μm InGaAsP/InP DOUBLE HETERO-STRUCTURE LED'S[J].Chinese Journal of Luminescence,1982,3(3):72-77. |
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| Authors: | Shui Hai-long Zhang Gui-cheng Wu Xiang-sheng Chen Qi-yu Xu Shao-hua Yang Yi Chen Rui-zhang Hu Dao-shan |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | The three and four layer InGaAsP/InP DH wafer used for fabrication of the LED''s were grown by LPE technique. The InGaAsP/InP DH LED''s have been fabricated. The device output was over 1mW, highest value was about 2mW. The output power of the tail fiber (core diameter 60 μm, N.A.=0.23) was over 50 μW. In this report the characteristics of the InGaAsP/lnP DH LED''s are described and the characteristics of the output saturation and degradation Were discussed. |
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