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以LiF修饰阴极的有机电致发光器件性能的提高
引用本文:黄永辉,李宏建,代国章,谢强,潘艳芝,戴小玉.以LiF修饰阴极的有机电致发光器件性能的提高[J].发光学报,2005,26(6):737-742.
作者姓名:黄永辉  李宏建  代国章  谢强  潘艳芝  戴小玉
作者单位:1. 湖南大学应用物理系, 湖南长沙 410082;2. 湖南大学应用物理系, 湖南长沙 410083
基金项目:湖南省杰出青年科学基金;中国博士后科学基金;中南大学校科研和教改项目
摘    要:提出了用一种无机半导体的模型来计算有机电致发光器件(OELDs)的J-V特性.通过在金属/有机物界面插入薄LiF层,由此引入的偶极子能极大地降低了电子的注入势垒和OELDs的开启电压.从而,载流子的注入得到了平衡,OELDs的性能得到了较大提高.经过数值计算,发现LiF插入层有一个约为1.5~5.0nm的最优厚度.LiF层太厚或太薄都会提高器件的开启电压、降低器件的性能.结果表明:这一模型可以用来解释OELD通过LiF修饰阴极后性能的提高.

关 键 词:有机电致发光器件  电极修饰  界面偶极子
文章编号:1000-7032(2005)06-0737-06
收稿时间:2004-12-13
修稿时间:2005-09-12

Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs
HUANG Yong-hui,LI Hong-jian,DAI Guo-zhang,XIE Qiang,PAN Yan-zhi,DAI Xiao-yu.Performance Enhancement by Modification of Cathode with a Thin LiF Layer in OELDs[J].Chinese Journal of Luminescence,2005,26(6):737-742.
Authors:HUANG Yong-hui  LI Hong-jian  DAI Guo-zhang  XIE Qiang  PAN Yan-zhi  DAI Xiao-yu
Institution:1. Department of Applied Physics Hunan University Changsha 410082 China;2. College of Physics Science and Technology Central South University Changsha 410083 China
Abstract:A model for inorganic semiconductor has been presented to calculate theJ-Vcharacteristics of organicelectroluminescent devices(OELDs).The additional dipole energy introduced by inserting a thin LiF layer at metal/organic interface significantly decreases the potential barrier for electrons injection and the turn-on voltage of OELD.The charge carriers injection has been balanced,and then the performance of OELD has been greatly enhanced.Bydetailed numerical calculation,it has been found that the optimal thickness of inserted LiF should be in the range of1.5 ~5.0 nm,too thick or too thin LiF will increase the turn-on voltage of OELD and degrade its performance.It hasbeen proved that this model is proper to explain the performance enhancement of OELDs via modification of electrodewith LiF.
Keywords:OLEDs  electrode modification  interface dipole
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