| 850nm高亮度近衍射极限锥形半导体激光器 |
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| 引用本文： | 杨晔,刘云,张金龙,李再金,单肖楠,王立军.850nm高亮度近衍射极限锥形半导体激光器[J].发光学报,2011,32(10):1064-1068. |
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| 作者姓名： | 杨晔 刘云 张金龙 李再金 单肖楠 王立军 |
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| 作者单位： | 1. 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所, 吉林 长春 130033;
2. 中国科学院 研究生院, 北京 100039;
3. 中国科学院 苏州生物医学工程技术研究所, 江苏 苏州 215163 |
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| 基金项目： | National High Technology Research and Development Program 863(Y0183NM100);the development project of scienceand technology of Suzhou(SYJG0904);the development project of science and technology of Suzhou(20100352);the special scientific research project of SIBET,CAS(O91901L090)~~ |
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| 摘 要： | 制备了具有低红暴优势的850 nm大功率高亮度锥形半导体激光器,获得了近衍射极限的激光输出.当连续输功率为200 mW时,光束质量因子M2仅为1.7,亮度高达16.3 MW·cm-2·sr-1；当功率提高到1W时,M2因子和亮度仍分别达到2.8和9.9 MW·cm-2· sr-1.此外,研究了锥形激光器的功率、光谱、远...
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| 关 键 词： | 850 nm 锥形激光器 高亮度 光束质量因子M2 |
| 收稿时间： | 2011-04-02 |
Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes |
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| YANG Ye,LIU Yun,ZHANG Jin-long,LI Zai-jin,SHAN Xiao-nan,WANG Li-jun.Near Diffraction Limit High-brightness 850 nm Tapered Laser Diodes[J].Chinese Journal of Luminescence,2011,32(10):1064-1068. |
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| Authors: | YANG Ye LIU Yun ZHANG Jin-long LI Zai-jin SHAN Xiao-nan WANG Li-jun |
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| Institution: | 1. Key laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China;
2. Graduate School of Chinese Academy of Sciences, Beijing 100039, China;
3. Laboratory of Mecical Laser Technology, Chinese Academy of Sciences, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China |
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| Abstract: | High-power high-brightness tapered laser diodes emitting at 850 nm have been manufactured, and the beam quality of near diffraction limit has been achieved. The beam propagation factor M2 is only 1.7 and the high brightness is up to 16.3 MW·cm-2·sr-1 when the output power is 200 mW, and the values change to 2.8 and 9.9 MW·cm-2·sr-1 under 1 W output. The electro-optical properties of tapered lasers are discussed. We have also studied the influence of tapered section length on output power. The results reported in this paper may become a step forward to new applications of tapered laser diodes. |
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| Keywords: | 850 nm tapered laser diode high brightness the beam propagation factor M2 |
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