首页 | 本学科首页   官方微博 | 高级检索  
     检索      

激光分子束外延方法生长的ZnO薄膜的发光特性
引用本文:谢伦军,陈光德,竹有章,张景文,杨晓东,徐庆安,侯洵.激光分子束外延方法生长的ZnO薄膜的发光特性[J].发光学报,2006,27(2):215-220.
作者姓名:谢伦军  陈光德  竹有章  张景文  杨晓东  徐庆安  侯洵
作者单位:1. 西安交通大学, 应用物理系, 陕西, 西安, 710049;2. 西安交通大学, 信息光子技术陕西省重点实验室, 陕西, 西安, 710049
基金项目:国家自然科学基金资助项目(10474078)
摘    要:研究了不同温度和不同光激发强度下激光分子束外延方法生长的ZnO薄膜样品的发光性能,发现YAG脉冲激光激发,强度超过一定值时会在长波方向上出现一个新的发光峰,此峰可能起源于电子-空穴的复合。室温下氙灯激发的光谱中可以看到峰值位于381nm的近带边紫外发射峰和位于450nm的强的蓝绿带发射,根据光致发光激发光谱的特征给出了一个简单的蓝光发射模型。对比YAG脉冲激光激发和氙灯激发得到的实验光谱,我们认为不同的光谱特征和样品发光的激发机制有关,紫外峰发射需激发强度超过一定值才能观察到,而蓝带发射则在一定的激发强度下迅速饱和。

关 键 词:ZnO薄膜  光致发光  电子-空穴等离子体  蓝带发射
文章编号:1000-7032(2006)02-0215-06
收稿时间:2004-08-25
修稿时间:2005-04-10

Photoluminescence Characteristics of ZnO Film Grown by Laser-MBE Method
XIE Lun-jun,CHEN Guang-de,ZHU You-zhang,ZHANG Jing-wen,YANG Xiao-dong,XU Qing-an,HOU Xun.Photoluminescence Characteristics of ZnO Film Grown by Laser-MBE Method[J].Chinese Journal of Luminescence,2006,27(2):215-220.
Authors:XIE Lun-jun  CHEN Guang-de  ZHU You-zhang  ZHANG Jing-wen  YANG Xiao-dong  XU Qing-an  HOU Xun
Institution:1. Department of Applied Physics, Xi’an Jiaotong University, Xi’an 710049, China;2. Key Laboratory of Photonics Technology for Information of Shaanxi Province, Xi’an Jiaotong University, Xi’an 710049, China
Abstract:Due to their wide potential applications in short-wavelength optoelectronic devices,ZnO and it's(alloy) have become one of the main topics in the research field of optoelectronic materials and devices.Although high quality ZnO films are available due to the improvement of material growth techniques,the luminescence behavior,mechanism and their relations with the structure of material are still unclear.Much work is needed for further understanding of the optical properties of ZnO films.In this paper,the photoluminescence properties of ZnO film grown by Laser-MBE method have been experimentally investigated.The optical characterization methods we used include temperature-dependent and excitation-intensity-dependent photoluminescence.When using YAG pulse laser as the excitation source,a new emission band appeared on the low energy side,it might be originated from electron-hole-plasma(EHP) recombination.Stimulated emission can be(detected) both from the surface and the edge of the film,this shows that the film contains certainty quantity of defects.However,the spectrum excited by an Xe lamp under room temperature contains two emission bands: the violet band with a peak at 381 nm and the blue-green band with a peak at 450 nm,based on the information given by the PLE spectrum,a simple model for blue emission in ZnO was proposed.By comparison of the different spectrum using different excitation sources,it is concluded that the violet band emission may require certain high excitation intensity,and the blue band emission saturates rapidly with the increasing excitation(inten)sity.
Keywords:ZnO film  photoluminescence  EHP  blue band emission  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《发光学报》浏览原始摘要信息
点击此处可从《发光学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号