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Mn掺杂ZnO柱的结构及光学性质
引用本文:曹萍,白越,曲直,赵东旭,申德振,范希武.Mn掺杂ZnO柱的结构及光学性质[J].发光学报,2010,31(5):635-638.
作者姓名:曹萍  白越  曲直  赵东旭  申德振  范希武
作者单位:1. 长春工程学院, 吉林 长春 130012; 2. 中国科学院 长春光学精密机械与物理研究所, 吉林 长春 130033; 3. 中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春 130033
基金项目:国家自然科学基金(50905174); 吉林省教育厅科技计划(2007203)资助项目
摘    要:采用电化学沉积方法在Si(111)衬底上制备出了Mn掺杂的ZnO柱,长度约为500~600 nm,直径为200~300 nm。通过XRD和XPS的表征可以判断出:Mn2+离子代替部分Zn2+离子进入了ZnO晶格,Mn离子的掺杂量为2%。样品的共振拉曼谱表明:由于Mn2+离子进入了晶格,导致ZnO的1LO和2LO光学纵向声子向高频移动。在He-Cd激光器325 nm激发下,可以观测到光谱中存在两个发光谱带,分别位于可见区和紫外区。

关 键 词:氧化锌柱  电沉积  共振拉曼
收稿时间:2010-04-14
修稿时间:2010-06-10

Structural and Optical Properties of Mn-doped ZnO Nanocolumns Grown by Cathodic Electrodeposition
CAO Ping,BAI Yue,QU Zhi,ZHAO Dong-xu,SHEN De-zhen,FAN Xi-wu.Structural and Optical Properties of Mn-doped ZnO Nanocolumns Grown by Cathodic Electrodeposition[J].Chinese Journal of Luminescence,2010,31(5):635-638.
Authors:CAO Ping  BAI Yue  QU Zhi  ZHAO Dong-xu  SHEN De-zhen  FAN Xi-wu
Institution:1. Changchun Institute of Technology, Changchun 130022, China; 2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China; 3. Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
Abstract:Application of semiconductor nanostructure materials in devices has become one of the major focuses in recent nanoscience researches. And considerable effort has been made to fabricate the zinc oxide (ZnO). With its large exciton binding energy of 60 meV, ZnO has been recognized as a promising photonic material in the shortwavelength region with significant potential in laser emission, field emission, and nanoscale heterojunction. Electrodeposition of polycrystalline semiconductor is mainly used for photovoltaic and optoelectronic applications. It is a simple and inexpensive technique compared to molecular beam epitaxy (MBE), liquid phase deposition (LPD), or chemical vapor deposition (CVD). Granular systems consisting of nanoscale ferromagnetic clusters imbedded in a semiconductor matrix have been recently realized using low temperature MBE by ion implantation/annealing, or simple annealing. As an alternative to this approach, we have investigated the electrodeposition of semiconductor-based systems consisting of Mn2+ in a ZnO semiconductor host.In this paper, we present the results of structural and optical properties of Mn doped ZnO nano columns electrodeposited onto p-type Si (111) substrates. Mn2+-doped ZnO nanocolumns have been successfully grown by electrodeposition method on Si substrate. The columns are 500~600 nm long with diameters ranging in 200~300 nm. X-ray diffraction (XRD) and X-ray photospectroscopy (XPS) studies suggeste that the Mn ions dope into the ZnO crystal lattice. The concentration of Mn ions is 2%. In the resonant-Raman spectrum, phonon frequency shifts to higher wavenumbers. In photoluminescence spectrum, a weak ultraviolet emission and a strong visible emission are observed.
Keywords:ZnO columns                  electrodeposition                  resonant-Raman
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