| Si衬底GaN基蓝光LED老化性能 |
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| 引用本文： | 肖友鹏,莫春兰,邱冲,江风益.Si衬底GaN基蓝光LED老化性能[J].发光学报,2010,31(3):364-368. |
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| 作者姓名： | 肖友鹏 莫春兰 邱冲 江风益 |
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| 作者单位： | 1. 南昌大学 教育部发光材料与器件工程研究中心, 江西 南昌 330047;2. 晶能光电(江西)有限公司, 江西 南昌 330029 |
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| 摘 要： | 报道了芯片尺寸为500μm×500μm硅衬底GaN基蓝光LED在常温下经1000h加速老化后的电学和发光性能,其光功率随老化时间的变化分先升后降两个阶段;老化后的反向漏电流和正向小电压下的电流均有明显的增加;老化后器件的外量子效率(EQE)比老化前低;老化前后EQE衰减幅度在不同的注入电流下存在明显差异,衰减幅度最小处出现在发光效率最高时对应的电流密度区间。
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| 关 键 词： | 硅衬底 GaN 蓝光LED 老化 光衰 |
| 收稿时间： | 2009-10-09 |
The Aging Characteristics of GaN-based Blue LED on Si Substrate |
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| XIAO You-peng,MO Chun-Lan,QIU Chong,JIANG Feng-yi.The Aging Characteristics of GaN-based Blue LED on Si Substrate[J].Chinese Journal of Luminescence,2010,31(3):364-368. |
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| Authors: | XIAO You-peng MO Chun-Lan QIU Chong JIANG Feng-yi |
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| Institution: | 1. Engineering Research Center for Luminescence Materials and Devices of the Education Ministry, Nanchang Uerversity, Nanchang 330047, China;2. Latticepower (Jiangxi ) Co.Ltd., Nanchang 330029, China |
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| Abstract: | The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied. The LED samples were stressed at room temperature with an injection current of 200 mA. Light-output power increases in the first stage and decreases with aging time. The current-voltage characteristics were also analyzed. Reverse current and forward current at low bias were increased significantly. The external quantum efficiency (EQE) of device after aging is lower than the pre-aging one. The EQE attenuation before and after aging are significantly different at different injection currents. The smallest attenuation occurs in the current density range corresponding to the highest efficiency. |
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| Keywords: | GaN |
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