| Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究 |
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| 引用本文： | 杨宇,黄醒良,刘晓晗,黄大鸣,蒋最敏,龚大卫,张翔九,赵国庆.Si_（1－x）Ge_x／Si量子阱发光材料的分子束外延生长及其结构研究[J].发光学报,1995(4). |
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| 作者姓名： | 杨宇 黄醒良 刘晓晗 黄大鸣 蒋最敏 龚大卫 张翔九 赵国庆 |
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| 作者单位： | 复旦大学应用表面物理国家重点实验室，中国科学院红外物理国家实验室，复旦大学物理二系 |
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| 摘 要： | 采用固源Ｓｉ分子束外延，在较高的生长温度于Ｓｉ（１００）衬底上制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ量子阱发光材料．发光样品的质量和特性通过卢瑟福背散射、Ｘ射线双晶衍射及光致发光评估．背散射实验中观察到应变超晶格的反常沟道效应；Ｘ射线分析表明材料的生长是共度的、无应力释放的，结晶完整性好．低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合．并讨论了生长温度对量于阱发光的影响．
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| 关 键 词： | Si分子束外延，SiGe／Si量子阱．结构，发光 |
MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si_(1-x)Ge_x/Si QUANTUM STRUCTURES |
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| Bang Yu,Huang Xingliang, Liu Xiaohan, Huang Daming Jiang Zuiming,Gong Dawei,Zhang Xiangjiu,Zhao Guoqin.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si_(1-x)Ge_x/Si QUANTUM STRUCTURES[J].Chinese Journal of Luminescence,1995(4). |
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| Authors: | Bang Yu Huang Xingliang Liu Xiaohan Huang Daming Jiang Zuiming Gong Dawei Zhang Xiangjiu Zhao Guoqin |
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| Abstract: | and edge luminescence with no deep level emissions is reported for St1-xGex/Si quantum well structures grown at high substrate temperatures by solid source St mole cular beam epitaxy, no-phonon transitions and transverse optical phonon replicas were clearly identified. Systematic studies based on Rutherford ion backscattering and X-ray diffraction were performed.Backscattering and channeling anomalous spectra was observed due to the strain of superlattice.Photoluminescence(PL)and X-ray rocking curve analysis of the sample indicated that a good crystalline quality and commensurate growth is essential to radiative recombination.The dependence of PL on the growth temperature were discussed. |
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| Keywords: | i-MBE SiGe/Si quantum wells strutures luminescence |
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