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ZnO/p-Si异质结的深能级及其对发光的影响
引用本文:刘磁辉,朱俊杰,林碧霞,陈宇林,彭聪,杨震,傅竹西.ZnO/p-Si异质结的深能级及其对发光的影响[J].发光学报,2001,22(3):218-222.
作者姓名:刘磁辉  朱俊杰  林碧霞  陈宇林  彭聪  杨震  傅竹西
作者单位:1. 中国科学技术大学物理系, 安徽合肥230026;2. 中国科学技术大学物理系中国科学技术大学结构分析开放实验室, 安徽合肥230026;3. 中国科学技术大学少年班, 安徽合肥230026
基金项目:国家自然科学基金资助项目 ( 5 9872 0 37),安徽省自然科学基金资助项目 ( 986 415 5 0 )
摘    要:利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E1=Ev+0.21eV,E2=Ev+0.44eV,E3=Ev+071eV;而1000℃退火样品仅存在一个E1=Ev+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。

关 键 词:深能级瞬态谱(DLTS)  PL谱  缺陷  新施主
文章编号:1000-7032(2001)03-0218-05
收稿时间:2000-09-25
修稿时间:2000年9月25日

Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence
LIU Ci hui ,ZHU Jun jie ,LIN Bi xia ,CHEN Yu lin ,PENG Cong ,YANG Zhen ,FU Zhu xi.Deep Level of ZnO/p-Si Heterostructure and Its Influence on the Photoluminescence[J].Chinese Journal of Luminescence,2001,22(3):218-222.
Authors:LIU Ci hui  ZHU Jun jie  LIN Bi xia  CHEN Yu lin  PENG Cong  YANG Zhen  FU Zhu xi
Institution:1. Department of Physics, Hefei 230026, China;2. Structure Research Laboratry, Hefei 230026, China;3. Special Class for the Gifted Young, University of Science and Technology of China, Hefei 230026, China
Abstract:The technology of deep level transient spectroscopy (DLTS) develops from the technology of measuring transient capacitance. Through the temperature scanning, it can rapidly,exactly describe the deep levels of the sample. And it has wide measuring range. So it has been becoming the popular measurement to study the deep level of the semiconductor. Zinc oxide is a self activated crystal with hexagonal wurtzite structure and has a gap of 3.3eV at room temperature.ZnO phosphor powders have been studied for several decades. Recently, ZnO films have attracted attention due to their wide applications in photoelectric materials such as surface acoustic wave guide, piezoelectric materials, transparent electrodes for some solar cells, and as a buffer layer for GaN. As most efforts focus on short wavelength semiconductor materials, stimulated and spontaneous ultraviolet emissions of ZnO thin films have been found. Comparing to the semiconductors used in conventional lasers, the UV emission of ZnO films has shorter wavelength. If a practical emitting device with short wavelength made by ZnO films could be fabricated, it must have exciting applications in compact disk recorder and other photoelectronics areas. In order to know the mechanism of its photoluminescence, the research in the properties of ZnO films is therefore important. In this article, we use deep level transient spectroscopy (DLTS) to study the ZnO/p Si heterostructure which was treated by two different temperatures (850℃, 1 000℃) and to find its relationship to the photoluminescence .The results showed that the sample 1# (850℃ treated) has three obvious deep levels (E1,E2,E3) and the sample 2# (1000℃ treated) has only E1 level. But the density of this level is higher than that of sample 1#. At the same time, the photoluminescence spectra of the samples were also measured. It is found that the sample 2# has higher density of photoluminescence because it has less levels and higher density of the level. Through the higher temperature (1000℃) treatment, some defect levels which affect the photoluminescence disappeared, and the crystal lattice become more integrated. So the treatment temperature of 1000℃ is efficient to improve the density of the photoluminescence of ZnO.
Keywords:deep level transient spectrum (DLTS)  photoluminescence (PL) spectrum  defect  and new donor
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