Ni/SnO_2复合薄膜的制备与光电性能

采用旋涂法将溶胶-凝胶法制备的Ni/Sn O2凝胶在玻璃基底上镀膜,得到了Ni/Sn O2复合薄膜,探讨了镍掺杂量、煅烧温度对薄膜结构和形貌的影响。通过X射线衍射、红外光谱、扫描电子显微镜等测试手段对Ni/Sn O2复合膜的结构和形貌进行表征。结果显示,500℃下煅烧的薄膜样品的结晶度较高,粒径小,颗粒分布均匀。用紫外-可见分光光度计和四探针电阻仪对其进行光学、电学性能测试,结果显示:适量的Ni掺杂可以提高Sn O2薄膜在近紫外光区的吸收,Ni/Sn O2薄膜在近紫外光区的吸收随着Ni2+掺杂摩尔分数从5%增加到10%而逐渐减小。当Ni2+掺杂摩尔分数为6%时,Ni/Sn O2复合薄膜的导电性能最好。

Preparation and Photoelectric Properties of Ni/SnO2 Composite Thin Films

Ni/SnO₂ films were prepared by spin coating Ni/SnO₂ gel on the glass substrates. The effects of the doping amount of nickel and calcination temperature on the structure and morphology of Ni/SnO₂ films were discussed. The structure and morphology of Ni/SnO₂ composite film were characterized by using XRD, IR, SEM and other testing methods. The results show that the particles of the film calcined at 500 ℃ have high crystallization, small size, and distribute uniformly. The right amount of Ni²⁺ doping can improve the absorbance in the near ultraviolet region of SnO₂ film, and the absorbance in the near ultraviolet region of Ni/SnO₂ film decreases with the increasing of Ni²⁺ mole fraction from 5% to 10%. The conductivity of Ni/SnO₂ film is the best when Ni²⁺ mole fraction is 6%.