GaN外延层中的缺陷对光学性质的影响

用金属有机化合物气相外延（ＭＯＶＥＰ）方法生长具有不同表面形貌的非掺杂ＧａＮ，并对部分样品的外延层表面进行镜面加工．用阴极射线发光、光散射和拉曼散射方法观察ＧａＮ中深能级发光、缺陷散射光分布和拉曼散射光频移．结果表明，缺陷不但影响ＧａＮ的发光和光散射，而且影响拉曼频移

INFLUENCE OF DEFECTS ON THE OPTICAL PROPERTIES OF GaN EPILAYERS

Undoped GaN epilayers with different surface morphologies were grown by MOVPE, and surfaces of part of epilayers were polished. Luminescence distribution of deep levels, scattering light of defects, and Raman shift were measured by cathodoluminescence, light scattering, and Raman scattering, respectively. The results show that the defects in GaN epilayers influence not only on the luminescence and light scattering properties but also on the Raman shifts.