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GaAs基高功率半导体激光器单管耦合研究
引用本文:王鑫,王翠鸾,吴霞,朱凌妮,马骁宇,刘素平.GaAs基高功率半导体激光器单管耦合研究[J].发光学报,2015,36(9):1018-1021.
作者姓名:王鑫  王翠鸾  吴霞  朱凌妮  马骁宇  刘素平
作者单位:中国科学院半导体研究所, 北京 100083
摘    要:设计了一种高亮度、高功率半导体激光器单管耦合输出模块, 采用波长为975nm的10W的GaAs基半导体激光器, 将半导体激光器输出光束耦合进数值孔径0.18、纤芯直径105μm的光纤中, 获得10A电流下的输出功率为9.37W, 耦合效率为94.3%, 亮度为1.64MW/(cm2·str)。

关 键 词:半导体激光器  光纤耦合  亮度
收稿时间:2015-05-19

Coupling Research of High Power Single GaAs Based Semiconductor Laser
WANG Xin,WANG Cui-luan,WU Xia,ZHU Ling-ni,MA Xiao-yu,LIU Su-ping.Coupling Research of High Power Single GaAs Based Semiconductor Laser[J].Chinese Journal of Luminescence,2015,36(9):1018-1021.
Authors:WANG Xin  WANG Cui-luan  WU Xia  ZHU Ling-ni  MA Xiao-yu  LIU Su-ping
Institution:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:A high brightness and high power fiber coupling laser module with single diode laser (LD) was designed and fabricated. The wavelength of GaAs semiconductor laser is 975 nm and power is 10W. The numerical aperture of the fiber is 0.18 and the core diameter is 105μm. When the drive current is 10A, 9.37W output power is obtained from the fiber, the coupling efficiency is 94.3% , and the brightness is 1.64MW/(cm2·str).
Keywords:semiconductor laser  fiber coupling  brightness
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