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ZnCdTe/ZnTe超晶格的近带边发射特性
引用本文:郑伟,范希武.ZnCdTe/ZnTe超晶格的近带边发射特性[J].发光学报,1996,17(3):210-214.
作者姓名:郑伟  范希武
作者单位:1. 中国科学院长春物理研究所, 长春 130021;2. 中国科学院激发态物理开放研究实验室, 长春 130021
基金项目:国家攀登计划项目,国家自然科学基金
摘    要:本文通过不同激发光强度下的光致发光实验,把Zn0.67Cd0.33Te/ZnTe超晶格(SLs)样品的两个发光谱峰分别归结为与激子有关的和导带电子到受主的辐射复合过程.为进一步了解样品的发光特性,做了不同温度下的光致发光实验,得到了两个谱峰在高温区的激活能,即:高能峰为127meV,低能峰为132meV.

关 键 词:超晶格  近带边光致发光  激活能
收稿时间:1995-09-07

CHARACTERIZATION OF NEAR BAND EDGE PHOTOLUMINESCENCE FOR ZnCdTe/ZnTe SUPERLATTICES
Zheng Wei, Fan Xiwu, Lu Youming, Zheng Zhuhong, Zhang Jiying, Yang Baojun, Shen Dezhen.CHARACTERIZATION OF NEAR BAND EDGE PHOTOLUMINESCENCE FOR ZnCdTe/ZnTe SUPERLATTICES[J].Chinese Journal of Luminescence,1996,17(3):210-214.
Authors:Zheng Wei  Fan Xiwu  Lu Youming  Zheng Zhuhong  Zhang Jiying  Yang Baojun  Shen Dezhen
Institution:1. Chongchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021;2. Laborotary of Excited State Processes, Chinese Acadmy of Sciences, Changchun 130021
Abstract:he two peaks of PL spectrum of Zn0.67Cd0.33Te/ZnTe superlattices are observed at 77 K and contributed to exciton related and free-to-bound radiative recombination transition, respectively. In order to get further information about the characterization of this sample, experiments of PL under different temperature have been developed. The activation energy of the two peaks in high temperature region has been obtained to be 127 meV and 132 meV, respectively.
Keywords:superlattices  near band edge photoluminescence  activation energy
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