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外电场下极性量子阱中杂质态结合能
引用本文:吴云峰,梁希侠,Bajaj K K.外电场下极性量子阱中杂质态结合能[J].发光学报,2009,30(3):285-292.
作者姓名:吴云峰  梁希侠  Bajaj K K
作者单位:1. 大连民族学院 理学院, 辽宁 大连 116600;2. 内蒙古大学 物理系, 内蒙古 呼和浩特 010021;3. 爱默瑞大学 物理系, 美国 亚特兰大 CA30322
基金项目:大连民族学院青年基金,Dalian Nationalities University Science Foundation for Youths,PhD Progress Foundation of Higher Education Institutions of China 
摘    要:我们用变分方法研究了外电场下量子阱中的杂质态结合能,计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al0.3Ga0.7As量子阱为例,讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。

关 键 词:施主杂质态  电子-声子相互作用  量子阱  斯塔克效应
收稿时间:2008-09-10

Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field
WU Yun-feng,LIANG Xi-xia,Bajaj K K.Binding Energies of Impurity States in Polar Quantum Well Structures in an External Electric Field[J].Chinese Journal of Luminescence,2009,30(3):285-292.
Authors:WU Yun-feng  LIANG Xi-xia  Bajaj K K
Institution:1. College of Science, Dalian Nationalities University, Dalian 116600, China;2. Department of Physics, Inner Mongolia University, Hohhot 010021, China;3. Department of Physics, Emory University, Atlanta, CA 30322, USA
Abstract:The binding energies of donor impurity states in quantum wells in the presence of an electric field were investigated by a variational method. The impurity-center as well as the bound electron couplings with both the longitudinal optical (LO) and interface optical (IO) phonons were taken into account in the calculation. The binding energies were obtained as the functions of impurity position, well width and electric field strength. The results for GaAs/Al0.3Ga0.7As quantum wells as an example were given and discussed. It was found that the correction due to electron-phonon interaction to the impurity state binding energies and the Stark shifts is quite significant.
Keywords:donor impurity state  electron-phonon interaction  quantum well  Stark effect
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