| 高取向As掺杂ZnO纳米线阵列的制备与表征 |
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| 引用本文： | 冯秋菊,冯宇,梁红伟,王珏,陶鹏程,蒋俊岩,赵涧泽,李梦轲,宋哲,孙景昌.高取向As掺杂ZnO纳米线阵列的制备与表征[J].发光学报,2011,32(2):154-158. |
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| 作者姓名： | 冯秋菊 冯宇 梁红伟 王珏 陶鹏程 蒋俊岩 赵涧泽 李梦轲 宋哲 孙景昌 |
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| 作者单位： | 1. 辽宁师范大学 物理与电子技术学院, 辽宁 大连 116029;
2. 大连理工大学 物理与光电工程学院, 辽宁 大连 116024 |
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| 基金项目： | 国家自然科学基金，中国博士后科学基金，辽宁省博士科研启动基金，辽宁省教育厅创新团队基金，辽宁省自然科学基金 |
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| 摘 要： | 在不采用任何金属催化剂的条件下,运用化学气相沉积法,在Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列.样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰,表明样品具有较好的结晶质量.场发射扫描电镜(FE-SEM)观察表明,As掺杂ZnO纳米线阵列具有均一的直径和长度,其顶部和根部直径分别为70 nm和1...
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| 关 键 词： | As掺杂 ZnO纳米线阵列 化学气相沉积 光致发光 |
| 收稿时间： | 2010-05-27 |
Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires |
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| FENG Qiu-ju,FENG Yu,LIANG Hong-wei,WANG Jue,TAO Peng-cheng,JIANG Jun-yan,ZHAO Jian-ze,LI Meng-ke,SONG Zhe,SUN Jing-chang.Fabrication and Characterization of Well-aligned Arsenic-doped ZnO Nanowires[J].Chinese Journal of Luminescence,2011,32(2):154-158. |
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| Authors: | FENG Qiu-ju FENG Yu LIANG Hong-wei WANG Jue TAO Peng-cheng JIANG Jun-yan ZHAO Jian-ze LI Meng-ke SONG Zhe SUN Jing-chang |
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| Institution: | 1. School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029, China;
2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | The ZnO nanowires were grown on Si(100) substrates by chemical vapor deposition method without using catalyst.The X-ray diffraction(XRD) indicates the highly preferred crystal orientation along the c axis of ZnO in this sample.Field emission scanning electron microscope(FE-SEM) showed well-aligned ZnO nanowires with uniform diameter,length,and density were grown perpendicularly on Si substrate.The top and root diameter of the ZnO nanowires are about 70 nm and 100 nm,respectively,and the length of the nanowi... |
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| Keywords: | arsenic doped ZnO nanowires chemical vapor deposition photoluminescence |
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