基于MoO3/Ag/MoO3透明阳极的顶发射OLED的模拟计算与制备

运用传输矩阵法和正交分析法模拟计算出MoO₃/Ag/MoO₃透明电极的最佳厚度,采用镀膜实验验证模拟计算的准确性,制备了一系列不同MoO₃膜厚度和Ag膜厚度的透明电极。然后,制备了一系列顶发射有机电致发光器件:铝/氟化锂(LiF)/三(8-羟基喹啉)铝(Alq₃)/N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺/三氧化钼(MoO₃)/银(Ag)/三氧化钼(MoO₃),来进一步验证模拟计算运用在器件制备中的准确性。MoO₃(10 nm)/Ag(10 nm)/MoO₃(25 nm)在532 nm处的透射率达到最大值88.256%,以该透明电极制备的器件与参考器件相比,性能有了明显提高,最大亮度和最大效率分别为20 076 cd/m²和4.03 cd/A,提高了18.5%和56%。器件性能的提高归因于顶发射OLED器件透射率的提高和MoO₃对空穴注入能力的提升。

Simulation Calculation and Preparation of Top Emitting OLEDs with Transparent Anode of MoO3/Ag/MoO3

The transfer matrix method and the orthogonal analysis method were used to calculate the optimum film thickness of MoO₃/Ag/MoO₃ as a transparent anode. In order to validate the accuracy of simulation calculation, MoO₃/Ag/MoO₃ transparent anodes with different thickness of MoO₃ and Ag films were fabricated. Then, the top emitting OLEDs with structure of Al/LiF/tris(8-hydroxyquinolinato)aluminum(Alq₃)/N,N'-bis-(1-naphthyl)-N,N'- biphenyl-1,1'-biphenyl-4,4'-diamine(NPB)/MoO₃/Ag/MoO₃ were fabricated to further verify the accuracy of the simulation calculation used in device fabrication. When the electrode thickness is MoO₃ (10 nm)/Ag (10 nm)/MoO₃ (25 nm), the device reaches the most optimal performance. The maximum transmittance is 88.256% at 532 nm. And the maximum luminance and luminous efficiency are 20 076 cd/m² and 4.03 cd/A, which are improved by 18.5% and 56% compared with the reference device, respectively. The results demonstrate a practical way to fabricate highly efficient top emitting OLEDs.