| 生长在p-GaAs衬底上的ZnO基异质结二极管电致发光(英文) |
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| 引用本文： | 李炳辉,姚斌,李永峰,邓蕊,张振中,刘卫卫,单崇新,张吉英,申德振.生长在p-GaAs衬底上的ZnO基异质结二极管电致发光(英文)[J].发光学报,2010,31(6):854-858. |
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| 作者姓名： | 李炳辉 姚斌 李永峰 邓蕊 张振中 刘卫卫 单崇新 张吉英 申德振 |
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| 作者单位： | 1. 中国科学院 长春光学精密机械与物理研究所 激发态物理重点实验室, 吉林 长春130033;
2. 吉林大学 物理学院, 吉林 长春 130021 |
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| 基金项目： | Project supported by the Key Project of National Natural Science Foundation of China(50532050); the "973" program(2006CB604906); the Knowledge Innovation Project of Chinese Academy of Sciences, and the National Natural Science Foundation of China(60806002,60506014,10874178,10674133,60776011) |
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| 摘 要： | 利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能,I-V特性的研究表明该器件具有良好的整流特性,开启电压为3 V,电致发光光谱由一个紫外发光峰和一个可见发光带构成,其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。
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| 关 键 词： | 氧化锌 分子束外延 电致发光 发光二极管 |
| 收稿时间： | 2010-06-28 |
| 修稿时间： | 2010-09-06 |
Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate |
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| LI Bing-hui,YAO Bin,LI Yong-feng,DENG Rui,ZHANG Zhen-zhong,LIU Wei-wei,SHAN Chong-xin,ZHANG Ji-ying,SHEN De-zhen.Ultraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate[J].Chinese Journal of Luminescence,2010,31(6):854-858. |
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| Authors: | LI Bing-hui YAO Bin LI Yong-feng DENG Rui ZHANG Zhen-zhong LIU Wei-wei SHAN Chong-xin ZHANG Ji-ying SHEN De-zhen |
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| Institution: | 1. Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
2. Department of Physics, Jilin University, Changchun 130021, China |
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| Abstract: | ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction, the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak. |
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| Keywords: | ZnO molecular beam epitaxy electroluminescence light-emitting diode |
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