| 具有穿插界面结构的高效绿光有机电致磷光器件 |
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| 引用本文： | 周禾丰,张存,郝玉英,高志翔,王华,许并社.具有穿插界面结构的高效绿光有机电致磷光器件[J].发光学报,2011,32(8):839-843. |
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| 作者姓名： | 周禾丰 张存 郝玉英 高志翔 王华 许并社 |
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| 作者单位： | 1. 太原理工大学 新材料界面科学与工程教育部重点实验室, 山西 太原 030024;
2. 太原理工大学 新材料工程技术研究中心, 山西 太原 030024;
3. 太原理工大学理学院 物理与光电工程系, 山西 太原 030024 |
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| 基金项目： | 国家自然科学基金(21071108,60976018); 教育部长江学者与创新团队发展计划项目(07020401); 山西省自然科学基金(2008011008,2010021023-2)资助项目 |
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| 摘 要： | 以传统有机电致磷光器件ITO/NPB/CBP∶Ir(ppy)3/BAlq/Alq3/LiF/Al为研究对象,在NPB/CBP∶Ir(ppy)3、CBP∶Ir(ppy)3/BAlq及BAlq/Alq3界面处构造交互穿插结构。器件的光电性能测试表明:交互穿插结构一方面能够降低电流密度,减少高电流密度下磷光猝灭中心的形成;另一方面能增加载流子复合界面面积,从而分散界面三线态激子,降低三线态-三线态激子的猝灭。此外,界面凸起的存在还有利于器件的光耦合输出。实验结果表明:当穿插厚度为10 nm,器件的最大电流效率达到34.0 cd/A,与传统器件的电流效率18.7 cd/A相比,提高了55%。
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| 关 键 词： | 有机电致发光器件 磷光 界面结构 发光效率 |
| 收稿时间： | 2011-05-08 |
High Efficienct Green-light Organic Phosphorescent Device with Interinserting Interface Structure |
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| ZHOU He-feng,ZHANG Cun,HAO Yu-ying,GAO Zhi-xiang,WANG Hua,XU Bing-she.High Efficienct Green-light Organic Phosphorescent Device with Interinserting Interface Structure[J].Chinese Journal of Luminescence,2011,32(8):839-843. |
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| Authors: | ZHOU He-feng ZHANG Cun HAO Yu-ying GAO Zhi-xiang WANG Hua XU Bing-she |
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| Institution: | 1. Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China;
2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China;
3. Department of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China |
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| Abstract: | On the basis of a traditional phosphorescent organic light emitting device (PHOLED) with the structure of ITO/NPB/CBP∶Ir(ppy)3/BAlq/Alq3/LiF/Al, a new structure PHOLED was fabricated in this paper, where concavo-convex shape was constructed at the NPB/CBP∶Ir(ppy)3, CBP∶Ir(ppy)3/BAlq and BAlq/Alq3 interface. A series of measurements of optical and electrical properties of device indicated that, (1) this concavo-convex interface structure with suitable protrusion thickness can reduce current density of device, hence reduce the formation of phosphorescence quench centers induced by high current density, (2) it can increase the area of charge carrier recombination interface and then disperse triplet excitons, hence decrease triplet-triplet quenching, (3) it can enhance the out-coupling of the waveguide light without spectral distortion. Therefore, this new structure with suitable protrusion thickness can increase remarkably the current efficiency of the device. When the protrusion thickness was 10 nm, the maximum current efficiency of the device can reach to 34.0 cd/A with an increase of 55% compared with the traditional device. |
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| Keywords: | organic light emitting devices phosphorescence interface luminous efficiency |
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