| 气源MBE外延自组装GeSi量子点的光致荧光 |
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| 引用本文： | 李辉,何涛,戴隆贵,王小丽,王文新,陈弘.气源MBE外延自组装GeSi量子点的光致荧光[J].发光学报,2011,32(8):789-792. |
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| 作者姓名： | 李辉 何涛 戴隆贵 王小丽 王文新 陈弘 |
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| 作者单位： | 中国科学院物理研究所 凝聚态物理国家重点实验室, 北京 100190 |
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| 基金项目： | 国家自然科学基金(10471026,10874212)资助项目 |
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| 摘 要： | 利用气源分子束外延技术(MBE)制作了GeSi自组装量子点样品.利用原子力显微镜(AFM)和光致荧光(PL)光谱研究了该量子点的形貌和光学性质.气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度.200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17 meV.升温至200 K,载流子的输运过程发生...
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| 关 键 词： | 气源分子束外延 锗硅量子点 激子 光致荧光 热猝灭 |
| 收稿时间： | 2011-03-18 |
Photoluminescence of GeSi Self-assembled Quantum Dots Grown by Gas Source MBE |
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| LI Hui,HE Tao,DAI Long-gui,WANG Xiao-li,WANG Wen-xin,CHEN Hong.Photoluminescence of GeSi Self-assembled Quantum Dots Grown by Gas Source MBE[J].Chinese Journal of Luminescence,2011,32(8):789-792. |
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| Authors: | LI Hui HE Tao DAI Long-gui WANG Xiao-li WANG Wen-xin CHEN Hong |
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| Institution: | National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| Abstract: | Self-assembled GeSi quantum dots(QDs) were grown by gas source molecular beam epitaxy(MBE).Morphology and optical properties of the QDs were studied by atomic force microscopy(AFM) and photoluminescence(PL) spectra.QDs structure grown by gas source MBE at lower temperature showed a higher QDs coverage,lower defect and impurity density.Below 200 K,carriers are trapped in QDs as excitons with bonding energy of about 17 meV.The transport process changes as increasing the temperature to 200 K.By fitting the tem... |
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| Keywords: | gas source MBE GeSi quantum dots exciton PL thermal quenching |
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