Crystallization behaviour of PZT in multilayer heterostructures |
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| Authors: | K Vorotilov A Sigov D Seregin Yu Podgorny O Zhigalina D Khmelenin |
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| Institution: | 1. Moscow State Technical University of Radioengineering, Electronics and Automation (MIREA), Technological Center, Moscow, Russiavorotilov@mirea.ru;3. Moscow State Technical University of Radioengineering, Electronics and Automation (MIREA), Technological Center, Moscow, Russia;4. Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia |
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| Abstract: | Microstructural and electrical properties of PZT (lead zirconate titanate) thin films prepared by sol-gel techniques at annealing temperatures in the range from 550°C to 900°C are studied. Perovskite (Pe) grain nucleation in PZT film starts but not completes at 550°C. Along with formation of round Pe (111) grains on the Pt (111) interface, the film contains small Pe and pyrochlore (Py) grains. Films annealed at the temperatures higher than 600°C demonstrate column structure of Pe grains, the amount of Py inclusions reduces with the annealing temperature and practically disappears at 700°C. An increase of annealing temperature leads to enhancement of (100) Pe orientation as a result of Ti diffusion on the Pt surface. Polarization decreases with the annealing temperature (maximum at 600°C), whereas permittivity increases up to the annealing temperature of 750°C. |
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| Keywords: | ferroelectric PZT thin film sol-gel method crystallization polarization dielectric constant |
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