Dielectric properties of Bi4Ti3O12–SrBi4Ti4O15 intergrowth ceramics synthesized by a modified oxalate route

In this study, Bi₄Ti₃O₁₂–SrBi₄Ti₄O₁₅ (BIT–SBTi) intergrowth ferroelectric ceramics was synthesized by a modified oxalate route. The phase formation behaviour, structure, morphology and electrical properties of the intergrowth ceramics were also investigated. The phase formation takes place through intermediate phases like SrBi₂O₄ and Bi₁₂TiO₂₀. The precursor mostly changes to Bi₄Ti₃O₁₂ at 600°C and to BIT–SBTi intergrowth at 800°C. Rietveld analysis of the X-ray diffraction pattern showed that the structure of the intergrowth compound was orthorhombic with lattice parameters a = 5.4408(3), b = 5.4505(1) and c = 74.0851(4) Å. The intergrowth ferroelectrics showed a phase transition at 610°C and a frequency-stable permittivity and dielectric loss behaviour. The intergrowth ferroelectrics also showed a larger 2P_r than their constituents BIT and SBTi.