Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

An ultraviolet photodetector was fabricated based on Mg_0.07Zn_0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340?nm UV light with density of 1.33 mW/cm². The device showed a low dark current of about 3×10^-10 A and a high photo-dark current ratio of 1×10⁵ at -2 V bias. A narrowband photoresponse was observed from 300 to 400?nm and centered at 340?nm with a full width at half-maximum of only 30?nm. The maximum peak response is at 340?nm, which is 0.192 A/W at the bias of -1 V.