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An approximation of semiconductor device of heat conduction by mixed finite element method and characteristics-mixed finite element method
Institution:1. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai University, Shanghai, PR China;2. Shanghai Industrial and Commercial Polytechnic, Shanghai, PR China;3. Department of Civil Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Special Administrative Region, PR China;4. Department of Transportation Engineering, TOD-based Sustainable Urban Transportation Center, Ajou University, Republic of Korea;5. Shanghai Key Laboratory of Mechanics in Energy Engineering, PR China
Abstract:
Keywords:Semiconductor device of heat conduction  Mixed finite element method  Characteristics-mixed finite element method  Post-processing step  Error estimates
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