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半导体与超晶格的数学模型及其分析Ⅰ:模型
引用本文:肖玲,邱又春,张凯军.半导体与超晶格的数学模型及其分析Ⅰ:模型[J].数学进展,2003,32(1):1-19.
作者姓名:肖玲  邱又春  张凯军
作者单位:1. 中国科学院数学与系统科学研究院,北京,100080,中国
2. 法国Paul Sabatier大学工业与数学物理实验室,图卢兹,31062,法国
3. 东北师范大学数学系,长春,吉林,130024,中国;Institut fur Mathematik,Universitat Wien,A-1090 Wien,Strudlhogasse 4,Austria
基金项目:Xiao L. acknowledges the support by the Special Funds of State Major Basic Research Projects(Grant No. 1999075107) and the Innovation Funds of AMSS, CAS of China. Zhang K. J. acknowledges supportby the Austrian government START-prize project "Nonlinear Schrodinger and Quantum Boltzmann Equations"(Y-137-TEC) and by the National Natural Science Foundation of China (No. 10271003).
摘    要:本文论及半导体与超晶格的数学模型方法的一些新近发展动态。介绍了半导体与超晶格的一些背景材料并给出了半导体宏观模型间的层次框架。超晶格中载流子传输的SHE扩散模型也被观察。

关 键 词:半导体  超晶格  数学模型方法  几何测度
文章编号:1000-0917(2003)01-0001-19

On Mathematical Modelling and Analysis in Semiconductors and Superlattices Part Ⅰ: Modelling
Abstract.On Mathematical Modelling and Analysis in Semiconductors and Superlattices Part Ⅰ: Modelling[J].Advances in Mathematics,2003,32(1):1-19.
Authors:Abstract
Abstract:In this paper we are concerned with some recent developments of the mathematical modelling in semiconductors and superlattices. Some background materials related to semiconductors and superlattices are introduced. A hierarchy of macroscopic semiconductor models is presented. A SHE-diffusion model of carrier transport from superlattices is investigated.
Keywords:semiconductors  superlattices  mathematical modelling  geometric measures
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