| MULTI-SCALE METHODS FOR INVERSE MODELING IN 1-D MOS CAPACITOR |
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| 作者姓名： | Pingwen Zhang Yi Sun Haiyan Jiang |
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| 作者单位： | Pingwen Zhang Yi Sun Haiyan Jiang (School of Mathematical Sciences，Peking University，Beijing，100871，People's Republic of China)Wei Yao(China Predictive Technology Laboratory，DigitalDNA Lab.-China，Motorola (China) Electronics Ltd.，Beijing，100022，People's Republic of China) |
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| 基金项目： | This project is supported by Motorola (China) Electronics Ltd. and the work of Pingwen Zhang is also partially supported by Special Funds for Major State Basic Research Projects of China G1999032804. |
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| 摘 要： | In this paper,we investigate multi-scale methods for the inverse modeling in 1-D Metal-Oxide-Silicon(MOS) capactior,First,the mathematical model of the device is given and the numerical simulation for the forward problem of the model is implemented using finite element method with adaptive moving mesh. Then numerical analysis of these parameters in the model for the inverse problems is presented .Some matrix analysis tools are applied to explore the parameters‘ sensitivities,And thired,the parameters are extracted using Levenberg-Marquardt optimization method.The essential difficulty arises from the effect of multi-scale physical differeence of the parameters.We explore the relationship between the parameters‘ sensitivitites and the sequencs for optimization,which can seriously affect the final inverse modeling results.An optimal sequence can efficiently overcome the multip-scale problem of these parameters,Numerical experiments show the efficiency of the proposed methods.
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| 关 键 词： | MOS电容器模型 金属一氧化物-半导体 向前问题 递问题 有限元法 Lavenberg-Marquardt 多尺度法 自适应移动网格 灵敏度分析 参数 优化问题 |
MULTI-SCALE METHODS FOR INVERSE MODELING IN 1-D MOS CAPACITOR |
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| Pingwen Zhang Yi Sun Haiyan Jiang.MULTI-SCALE METHODS FOR INVERSE MODELING IN 1-D MOS CAPACITOR[J].Journal of Computational Mathematics,2003,21(1):85-100. |
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| Authors: | Pingwen Zhang Yi Sun Haiyan Jiang |
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| Abstract: | In this paper, we investigate multi-scale methods for the inverse modeling in 1-D Metal-Oxide-Silicon (MOS) capacitor. First, the mathematical model of the device is given and the numerical simulation for the forward problem of the model is implemented using finite element method with adaptive moving mesh. Then numerical analysis of these parameters in the model for the inverse problem is presented. Some matrix analysis tools are applied to explore the parameters' sensitivities. And third, the parameters are extracted using Levenberg-Marquardt optimization method. The essential difficulty arises from the effect of multi-scale physical difference of the parameters. We explore the relationship between the parameters' sensitivities and the sequence for optimization, which can seriously affect the final inverse modeling results. An optimal sequence can efficiently overcome the multi-scale problem of these parameters. Numerical experiments show the efficiency of the proposed methods. |
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| Keywords: | Inverse problem MOS capacitor model Finite element method Adaptive mov-ing mesh Levenberg-Marquardt method Sequence for optimization Multi-scale methods |
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