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ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS
作者姓名:郭秀兰  李开泰
作者单位:[1]DepartmentofMathematics,LuoyangNormalCollege,Luoyang471022,China [2]FacultyofScience,Xi'anJiaotongUniversity,Xi'an710049,China
摘    要:This paper is devoted to the long time behavior for the Drift-diffusion semi-conductor equations. It is proved that the dynamical system has a compact, connected and maximal attractor when the mobilities are constants and generation-recombination term is the Auger model; as well as the semigroup S(t) defined by the solutions map is differential. Moreover the upper bound of Hausdorff dimension for the attractor is given.

关 键 词:渐进  漂流空间模型  Housdorff元  偏微分方程  电势能

ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS
Guo Xiulan.ASYMPTOTIC BEHAVIOR OF THE DRIFT-DIFFUSION SEMICONDUCTOR EQUATIONS[J].Acta Mathematica Scientia,2004,24(3):385-394.
Authors:Guo Xiulan
Institution:Guo Xiulan Department of Mathematics,Luoyang Normal College,Luoyang 471022,China Li Kaitai Faculty of Science,Xi'an Jiaotong University,Xi'an 710049,China
Abstract:This paper is devoted to the long time behavior for the Drift-diffusion semiconductor equations. It is proved that the dynamical system has a compact, connected and maximal attractor when the mobilities are constants and generation-recombination term is the Auger model; as well as the semigroup S(t) defined by the solutions map is differential. Moreover the upper bound of Hausdorff dimension for the attractor is given.
Keywords:Drift-diffusion model  auger term  attractor  Housdorff dimensions
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