| IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE |
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| 作者姓名： | 陈蔚 |
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| 作者单位： | Academy of |
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| 基金项目： | China Postdoctoral Science Foundation |
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| 摘 要： | The transient behavior of a semiconductor device consists of a Poisson equa-tion for the electric potential and of two nonlinear parabolic equations for the electrondensity and hole density.The electric potential equation is discretized by a mixed finiteelement method. The electron and hole density equations are treated by implicit-explicitmultistep finite element methods. The schemes are very efficient. The optimal order errorestimates both in time and space are derived.
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IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE |
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| Chen Wei
Academy of Mathematics & System science,CAS,Beijing ,China School of Economics,Shandong University,Jinan ,China.IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE[J].Acta Mathematica Scientia,2003,23(3). |
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| Authors: | Chen Wei
Academy of Mathematics & System science CAS Beijing China School of Economics Shandong University Jinan China |
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| Institution: | Chen Wei
Academy of Mathematics & System science,CAS,Beijing 100080,China School of Economics,Shandong University,Jinan 250100,China |
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| Abstract: | The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived. |
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| Keywords: | Semiconductor device strongly A(0)-stable multistep methods finite element methods mixed finite element methods |
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