Evidence for muonium emission from an SiO2 layer on n-type Si and the positive muon state in Si |
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| Authors: | A Matsushita Y Miyake Y Murata K Nishiyama K Nagamine D G Fleming M Morita T Ohmi |
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| Institution: | (1) Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, 106 Tokyo, Japan;(2) Meson Science Laboratory, University of Tokyo, Hongo, Bunkyoku, 113 Tokyo, Japan;(3) Department of Chemistry, University of British Columbia, V6T 1Y6 Vancouver, British Columbia, Canada;(4) Department of Electronics, Tohoku University, Aoba, 980 Sendai, Japan;(5) Present address: Institute of Physical and Chemical Research (RIKEN), Hirosawa, 351-01 Woko, Saitama, Japan |
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| Abstract: | Evidence for the emission of slow muonium atoms from a 3.0-nm-thick SiO2 layer covered on an n-type Si is reported. Also, upon applying an rf-resonance technique at the muon frequency, a time-differential
observation of a delayed state-change from muonium to diamagnetic muon at room temperature was observed. Combining results
obtained by use of longitudinal field decoupling and transverse spin rotation methods, the conversion rate was estimated to
be 5 to 10 μs−1. Both of the above results, namely the observation of the emission and state-change of muonium, suggest a process in which
μ+ initially captures an electron from Si, then quickly converts to μ+ again during thermal diffusion in the Si towards the SiO2 layer. Within the oxide layer, muonium is again formed and subsequently is emitted from the SiO2 surface. |
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