| Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes |
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| 作者姓名： | 王俊 马骁宇 白一鸣 曹力 吴大进 |
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| 作者单位： | National Engineering Research Center for Opto-electronic Device,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China;Department of Physics, Huazhong University of Science and Technology,Wuhan 430074, China;National Engineering Research Center for Opto-electronic Device,Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;Department of Physics, Huazhong University of Science and Technology,Wuhan 430074, China;Department of Physics, Huazhong University of Science and Technology,Wuhan 430074, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 10275025). |
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| 摘 要： | Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μmInGaAsP/InP laser diodes have become main light sources in fibre communicationsystems recently. Influences of quantum noises on direct-modulated properties ofsingle-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article.Considering the carrier and photon noises and the cross-correlation between the twonoises, the power spectrum of the photon density and the signal-to-noise ratio (SNR)of the direct-modulated single-mode laser system are calculated using the linearapproximation method. We find that the stochastic resonance (SR) always appears inthe dependence of the SNR on the bias current density, and is strongly affected bythe cross-correlation coefficient between the carrier and photon noises, thefrequency of modulation signal, and the photon lifetime in the laser cavity. Hence,it is promising to use the SR mechanism to enhance the SNR of direct-modulatedInGaAsP/InP laser diodes and improve the quality of optical fibre communicationsystems.
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| 收稿时间： | 2005-10-19 |
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