Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects |
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| Authors: | P G Baranov A P Bundakova I V Borovykh S B Orlinski? R Zondervan J Schmidt |
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| Institution: | 1.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.Laboratory of Biophysics,Wageningen University,Wageningen,The Netherlands;3.Fachbereich Physik,Universit?t Osnabrück,Osnabrück,Germany;4.Kazan State University,Kazan,Russia;5.Huygens Laboratory, Faculty of Mathematics and Natural Sciences,Leiden University,Leiden,The Netherlands |
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| Abstract: | Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant change by a factor of 2–3 has been found in the luminescence intensity of zero-phonon lines in zero magnetic field upon absorption of microwave radiation with energy equal to the fine-structure splitting of spin sublevels of the vacancy ground state, which opens up possibilities for magnetic resonance detection at a single vacancy. |
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