GaN-based violet laser diodes grown on free-standing GaN substrate |
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Authors: | Zhang Li-Qun Zhang Shu-Ming Jiang De-Sheng Wang Hui Zhu Jian-Jun Zhao De-Gang Liu Zong-Shun and Yang Hui |
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Institution: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China |
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Abstract: | A violet laser diode (LD) structure is grown on a
free-standing c-plane GaN substrate and 4~μ m× 800~μ
m ridge waveguide LDs are fabricated. The electrical and the
optical characteristics of LDs under different facet-coating and
chip-mounting conditions are investigated under pulse mode
operation. The active region temperatures of p-side up and p-side
down mounted LDs are calculated with different injection currents.
The calculated thermal resistances of p-side up and p-side down
mounted LDs are 4.6~K/W and 3~K/W, respectively. The threshold
current of the p-side down mounted LD is much lower than that of the p-side
up mounted LD. The blue shift of the emission wavelength with increasing
injection current is observed only for the LD with p-side down mounting
configuration, due to the more efficient heat dissipation. |
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Keywords: | GaN laser diode mounting configuration active region
temperature |
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