Growth and characterisation of Eu doped GaN thin films |
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Authors: | G Halambalakis N Rousseau O Briot S Ruffenach RL Aulombard PR Edwards KP ODonnell T Wojtowicz P Ruterana |
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Institution: | aGroupe d’Etude des Semiconducteurs, Université Montpellier II, CC074, Place Eugène Bataillon, 34095 Montpellier Cedex 5, France;bDepartment of Physics, Strathclyde University, 107 Rottenrow East, Glasgow, G4 0NG, United Kingdom;cLERMAT, FRE 2149 CNRS-ISMRA, 6, Bld Maréchal Juin, 14500 Caen, France |
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Abstract: | We have studied the optical properties of Eu doped GaN thin films. We have grown high quality Eu doped GaN thin films by using Gas Source Molecular Beam Epitaxy (GSMBE), with 1.4% Eu concentration. The Full Width at Half Maximum (FWHM) of the X-ray diffraction in an omega scan was found to be 288 arcsecs. Low Eu concentration (0.08%) doped GaN thin films were grown, where Eu-related photoluminescence at 622 and 613 nm was detected using above band-gap excitation at 2 K. For high Eu concentration of 30% GaN:Eu crystal photoluminescence (PL) and cathodoluminescence (CL) spectra show strong and intense transitions at 622 and 664 nm, but also at 593 nm for CL spectra, with a similar transition observed from the low Eu concentration sample. |
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