| Institution: | 1. Institute of Physics, Karl-Franzens University Graz, Universitätsplatz 5, A-8010 Graz, Austria;2. Laboratoire d’Electronique de Technologie de l’Information, CEA-Grenoble 17 rue des Martyrs, 38054 Grenoble Cedex 9, France;3. Laboratoire de Spectrométrie Physique, CNRS UMR5588, Université Joseph Fourier Grenoble BP 87, 38402 Saint Martin d’Hères Cedex, France;1. Laboratory of Infrared Material and Devices, The Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China;2. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China;1. School of Electronic and Information Engineering, Ningbo University of Technology, Ningbo 315016, People’s Republic of China;2. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China;3. Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, People’s Republic of China;1. State Key Laboratory for Mesoscopic Physics & Department of Physics, Peking University, Beijing 100871, China;2. MATEIS, UMR 5510 CNRS, INSA-Lyon, Université de Lyon, Villeurbanne Cedex 69621, France;3. ILM, UMR 5306 CNRS, Université de Lyon, Villeurbanne Cedex 69622, France;4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China;1. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;2. National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, China |
